Si杂质扩散诱导InGaAs/AlGaAs量子阱混杂的研究（英文）  

Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities

作　　者：刘翠翠 林楠[1,2] 熊聪 曼玉选[1,2] 赵碧瑶 刘素平 马骁宇[1,2] LIU Cui-cui;LIN Nan;XIONG Cong;MAN Yu-xuan;ZHAO Bi-yao;LIU Su-ping;MA Xiao-yu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程中心,北京100083 [2]中国科学院大学,北京100049

出　　处：《中国光学》2020年第1期203-216,共14页Chinese Optics

基　　金：半导体激光器军民两用基金预研项目(No.41414010302)~~

摘　　要：光学灾变损伤(COD)常发生于量子阱半导体激光器的前腔面处,极大地影响了激光器的出光功率及寿命。通过杂质诱导量子阱混杂技术使腔面区波长蓝移来制备非吸收窗口是抑制腔面COD的有效手段,也是一种高效率、低成本方法。本文选择了Si杂质作为量子阱混杂的诱导源,使用金属有机化学气相沉积设备生长了InGaAs/AlGaAs量子阱半导体激光器外延结构、Si杂质扩散层及Si 3 N 4保护层。热退火处理后,Si杂质扩散诱导量子阱区和垒区材料互扩散,量子阱禁带变宽,输出波长发生蓝移。退火会影响外延片的表面形貌,而表面形貌则可能会影响后续封装工艺中电极的制备。结合光学显微镜及光致发光谱的测试结果,得到825℃/2 h退火条件下约93 nm的最大波长蓝移量,也证明退火对表面形貌的改变,不会影响波长蓝移效果及后续电极工艺。Catastrophe Optical Damage(COD)usually occurs at the front cavity surface of quantum well semiconductor laser diodes,and it is a great trouble to its output power and life.The preparation of Non-Absorption Window(NAW)by quantum well intermixing based on Impurity Induced Disordering(IID)is a common method for inhibiting COD at the cavity surface,which has a great potential to achieve blue shift with high efficiency and low cost.In this paper,Si impurities were used to induce quantum well intermixing.The epitaxial structure of the InGaAs/AlGaAs quantum well semiconductor laser diode and the Si impurity diffusion layer and Si 3N 4 protective layer were grown by a Metal Organic Chemical Vapor Deposition(MOCVD)device.After several thermal annealing treatments,the Si impurity diffusion inducing the mutual diffusion between the quantum well and the barrier,which widened the band gap of the quantum well area and resulted in blue shift of the output wavelength,reducing the absorption of the emitted light.Usually thermal annealing will affect the surface morphology of epitaxial surface,and the surface morphology may affect the preparation of electrode in the subsequent packaging process.Combined with an optical microscope and photoluminescence(PL)spectrum,experimental results indicate that about 93nm wavelength blue shift can be observed under the annealing condition of 825℃/2 h.In conclusion,annealing can affect the topography of the epitaxial wafer's surface,but it does not affect the blue shift of wavelength and the preparation of electrode.

关 键 词：量子阱半导体激光器 光学灾变损伤 量子阱混杂 蓝移 

分 类 号：TN248.4[电子电信—物理电子学] TN314.3