650V eGaN HEMT短路特性研究  

Analysis of short-circuit characteristics of eGaN HEMT

作　　者：张英[1] 秦海鸿[1] 彭子和 修强 荀倩 ZHANG Ying;QIN Hai-hong;PENG Zi-he;XIU Qiang;XUN Qian(Center for More-Electric-Aircraft Power System,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China;Chalmers University of Technology,G?teborg 999034,Sweden)

机构地区：[1]多电飞机电气系统工业与信息化部重点实验室,南京航空航天大学,江苏南京211106 [2]查尔姆斯理工大学,瑞典哥德堡999034

出　　处：《电工电能新技术》2020年第2期10-20,共11页Advanced Technology of Electrical Engineering and Energy

基　　金：国家自然科学基金项目(51677089);中央高校基本科研业务费专项资金项目(NJ20160047);江苏省研究生科研与实践创新计划项目(KYCX18_0287)

摘　　要：增强型GaN HEMT(eGaN HEMT)可以大幅提升变换器的效率和功率密度,具有广泛的应用前景。但实际应用中由桥臂串扰引起的误导通,以及负载侧短路等都会导致eGaN HEMT流过较大的电流。因此,为了确保eGaN HEMT在过载、短路等工况下安全可靠工作,必须深入探究eGaN HEMT的短路工作原理以及电路参数对其短路特性的影响。本文首先建立了硬开关模式下的短路测试平台对eGaN HEMT的短路过程进行了研究,并利用eGaN HEMT热网络模型,分析了其短路过程中结温变化情况,进一步地探究了不同结温对其短路特性的影响。在此基础上对不同电路参数对eGaN HEMT短路特性的影响进行研究和对比,揭示了影响eGaN HEMT短路特性关键因素,为e GaN HEMT短路保护设计提供了一定的指导。eGaN HEMT has great application prospect due to the ability to significantly enhance efficiency and power density of converters. However,unintended turn on caused by cross talk or short circuit in load may cause e GaN HEMT to withstand large current in these applications. Thus,in order to ensure the safety and reliability of e GaN HEMT power devices in the overload and short circuit,etc,it is important to explore the short circuit principle and characteristic of eGaN HEMT,and the influence of circuit parameters on short circuit characteristics. In this paper,the short circuit test platform is established to analyse the short circuit process of eGaN HEMT. Then,the eGaN HEMT thermal network model is used to analyze the junction temperature during the short circuit,and explores the effects of different junction temperature on the short circuit characteristics. Furthermore,the influence of different circuit parameters on the short-circuit characteristics is studied and compared to reveal the key factor influencing short circuit characteristics,which provides some guidance for the design of short circuit protection of eGaN HEMT.

关 键 词：增强型GaN HEMT 短路特性 短路保护 温度依赖性 

分 类 号：TM464[电气工程—电器]