双极型模拟IC总剂量效应仿真验证研究  

Simulation Verification of Total Dose Effect for Bipolar Analog IC

作　　者：罗俊[1] LUO Jun(No.24 Research Institute of CETC,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十四研究所

出　　处：《电子产品可靠性与环境试验》2020年第1期18-23,共6页Electronic Product Reliability and Environmental Testing

摘　　要：为了解决航天用双极型模拟集成电路的电离总剂量效应评估问题,结合基于失效物理的半导体器件仿真方法,提出了基于失效物理的双极型模拟集成电路电离总剂量效应仿真验证方法。在此基础上,以某型高性能固定频率电流型控制器芯片为研究对象,通过对双极型晶体管单元器件的抗总剂量能力进行仿真研究,可以确定该芯片的抗总剂量能力在剂量率为0.1 rad(Si)/s时高于100 krad(Si),与实际的试验结果一致,为双极型模拟集成电路抗总剂量能力评估提供了一种新思路。In order to solve the problem of total ionizing dose effect evaluation of bipolar analog IC for aerospace applications,combined with the simulation method of semiconductor devices based on failure physics,a simulation verification method for total ionizing dose effect of bipolar analog IC based on failure physics is proposed.On this basis,taking a high-performance fixed-frequency current-type controller chip as the research object,by simulating the anti-total dose capability of bipolar controller unit,it can be determined that the anti-total dose capability of the chip is higher than 100 kad(Si)when the dose rate is 0.1 rad(Si)/s,it is consistent with the experimental results,which provides a new way to evaluate the anti-total dose capability of bipolar analog IC.

关 键 词：双极型器件 模拟集成电路 总剂量效应 失效物理 仿真验证 

分 类 号：TP391.99[自动化与计算机技术—计算机应用技术]