磁控溅射制备Mo电极实验设计与研究  

Experimental Design and Research of Mo Electrode Prepared by Magnetron Sputtering

作　　者：尚正国[1] 李东玲[1] 佘引 陈宇昕 SHANG Zhengguo;LI Dongling;SHE Yin;CHEN Yuxin(College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China)

机构地区：[1]重庆大学光电工程学院

出　　处：《实验科学与技术》2020年第1期17-21,共5页Experiment Science and Technology

基　　金：重庆市自然科学基金(cstc2017jcyjAX0237);863计划先进制造技术领域(2015AA042603)

摘　　要：采用脉冲直流反应磁控溅射的方式在硅衬底上制备钼(Mo)电极。通过分析单一变量(如工艺真空度、气体流量等工艺参数)对Mo电极性能的影响,结合相关性实验设计规则,探究影响Mo电极性能的关键因素,优化Mo电极制备工艺,对Mo电极薄膜的性能进行表征。实验结果表明:该实验过程简单直观、效率高,能使学生对半导体加工工艺的实验设计及工艺调控有直观体验,可满足微电子及仪器科学与技术等专业实验课程需要。同时,实验成果也可直接应用于微机电系统(MEMS)压电器件、大面积集成电路、软X射线反射元件等多个领域中。The Mo electrode on the silicon wafers were prepared by pulsed DC reactive magnetron sputtering.The effects of a single variable such as vacuum and gas flow on properties of Mo electrode were investigated,design rules combined with correlation experiment were explored to find out the key factors that affect the performance of the electrode.The preparation process of Mo electrode was optimized and the properties of Mo electrode film were characterized.The results show that the process is simple and intuitive,high efficiency.It enables students to have an intuitive experience in design and control of the process,and meets the needs of experimental courses in Microelectronics and Instrument Science and Technology,while the experimental results can be directly applied in microelectromechanical systems(MEMS)piezoelectric devices,large area integrated circuits,soft X-ray reflection elements and so on.

关 键 词：磁控溅射 半高宽 单一变量 摇摆曲线 

分 类 号：TN3[电子电信—物理电子学]