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作 者:马海林 范多旺[2] 夏荣斌[3] 俞天智[1] MA Hai-lin;FAN Duo-wang;XIA Rong-bin;YU Tian-zhi(Key Laboratory of Opto-Technology and Intelligent Control Ministry of Education,Lanzhou Jiaotong University,Lanzhou 730070,China;National Engineering Research Center of Green Coating Technology and Equipment,Lanzhou Jiaotong University,Lanzhou 730070,China;Changzhou Research Institute,Lanzhou Jiaotong University,Changzhou 213034,Jiangsu,China)
机构地区:[1]兰州交通大学光电技术与智能控制教育部重点实验室,兰州730070 [2]兰州交通大学国家绿色镀膜技术与装备工程技术研究中心,兰州730070 [3]兰州交通大学常州研究院,江苏常州213034
出 处:《兰州交通大学学报》2020年第1期108-112,共5页Journal of Lanzhou Jiaotong University
基 金:国家自然科学基金(61864005)
摘 要:针对市面上对产品的耐腐蚀性要求,在工业化生产设备上,利用中频反应磁控溅射方法,在不同样件表面上沉积了氮化铝(AlN)薄膜用于产品外观抗腐蚀保护.研究了反应溅射“迟滞回线”现象并结合紫外-可见-红外光谱测算出所制备的工业级AlN薄膜的光学带隙(Eg)为6.3±0.1 eV.利用人造气氛腐蚀试验探讨了AlN薄膜保护下样品的耐腐蚀性能,结果表明:对于塑料装饰件,在经过72 h铜盐加速醋酸盐雾试验(CASS)时才出现被腐蚀痕迹,而镁合金样件在36 h时CASS试验时出现腐蚀,二者均已达到同类工业产品镀铬膜(Cr)保护层的耐腐蚀性能要求,太阳能真空吸热管多层膜涂层经30 h CASS试验后太阳光谱吸收率有所降低但仍达到合格水平.To meet the corrosion resistance requirements of products in the market,Aluminum nitride(AlN)thin films were deposited on different substrates by middle frequency magnetron reactive sputtering equipped with industrial production equipment.The hysteresis loop occurred in the reacting sputtering and aluminum nitride's optical band gap were studied,combined with UV-vis spectrophotometer,the prepared industrial-grade AlN thin film was measured and calculated to be 6.3±0.1 eV.The corrosion resistance properties of AlN films were tested in artificial atmospheres-revealed that the corrosion mark of plastic decoration appeared after 72 hours of copper-accelerated acetic acid-salt spray testing(CASS),while the magnesium alloy samples were corroded after CASS test for 36 hours which already reached similar products plating chromium(Cr)protective layers.The solar vacuum absorption tube coated with multilayer films which was protected by AlN film can withstand CASS test for 30 hours.Although the solar spectral absorptance has shown the tendency of decreasing,it has still reached a qualified level.
分 类 号:TB37[一般工业技术—材料科学与工程] O472.1[理学—半导体物理]
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