高能脉冲磁控溅射技术制备VO2薄膜研究进展  

Recent progress on the preparation of VO2 thin films by high-power impulse magnetron sputtering technology

作　　者：谷金鑫 魏航 任飞飞 李龙 范青潽 赵九蓬 豆书亮 李垚[2] GU Jinxin;WEI Hang;REN Feifei;LI Long;FAN Qingpu;ZHAO Jiupeng;DOU Shuliang;LI Yao(School of Chemistry and Chemical Engineering,Harbin Institute of Technology,Harbin 150001,China;Center for Composite Materials and Structure,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学化工与化学学院,黑龙江哈尔滨150001 [2]哈尔滨工业大学复合材料与结构研究所,黑龙江哈尔滨150001

出　　处：《哈尔滨工程大学学报》2020年第2期219-226,共8页Journal of Harbin Engineering University

基　　金：国家自然科学基金项目(51572058,51902073);中央高校基本科研业务费专项基金(HIT.NSRIF.2020019);装备发展部领域基金(6140922010901);中国博士后科学基金项目(2019M661273);黑龙江省博士后科学基金(LBH-Z19159)

摘　　要：高能脉冲磁控溅射(HiPIMS)技术具有低占空比、低频率、高峰值功率密度、高溅射等离子体密度等特点,能够在高峰值功率下进行薄膜沉积,从而提高薄膜的沉积质量。将高能脉冲磁控溅射技术用于二氧化钒(VO2)薄膜的沉积,能够降低其制备温度,提高致密度。本文介绍了高能脉冲磁控溅射技术的特点,阐述了高能脉冲磁控溅射技术制备VO2热致变色材料的研究现状,最后总结了利用高能脉冲磁控溅射技术制备VO2薄膜的优势以及存在的问题并对其应用进行展望。(HiPIMS) can deposit high-quality thin films under high peak power due to its low duty cycle, low-frequency operation, high peak-power density, and high plasma density. HiPIMS can be used to deposit VO2 thin films by decreasing the preparation temperature while increasing the density of the thin film. In this paper, the main characteristics of HiPIMS are reviewed. At last, the advantages and problems in preparing VO2 thin films by HiPIMS were summarized and the application trends were prospected.

关 键 词：二氧化钒 热致变色 透过光谱 相变特性 高能脉冲 磁控溅射 放电特性 沉积温度 

分 类 号：TB381[一般工业技术—材料科学与工程]