Ti与Al比例及退火温度对AlGaN/GaN HEMT欧姆接触影响  

Effect of Ti and Al ratio and annealing temperatures on ohmic contact of AlGaN/GaN HEMT

作　　者：李冰冰 张贺秋[1] 刘旭阳[1] 刘俊[1] 薛东阳 梁红伟[1] 夏晓川[1] LI Bingbing;ZHANG Heqiu;LIU Xuyang;LIU Jun;XUE Dongyang;LIANG Hongwei;XIA Xiaochuan(School of Microelectronics,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学微电子学院,辽宁大连116024

出　　处：《大连理工大学学报》2020年第2期137-141,共5页Journal of Dalian University of Technology

基　　金：国家自然科学基金资助项目(ZX0180421,ZX20160406,11975257);大连市科技计划资助项目(ZX20180681).

摘　　要：利用热蒸发方法制备了Ti/Al金属双层结构的AlGaN/GaN高电子迁移率晶体管(HEMT)欧姆接触,Ti与Al比例分别为1∶2(20 nm/40 nm)、1∶5(20 nm/100 nm)和1∶8(20 nm/160 nm).采用相同退火时间、不同退火温度对不同的Ti与Al比的AlGaN/GaN HEMT结构进行退火.通过XRD对电极结构进行了分析,利用金相显微镜观察了电极的表面形貌.实验结果显示,相同退火时间条件下,退火温度在800℃, Ti与Al比为1∶5的AlGaN/GaN HEMT结构形成了较好的欧姆接触.The AlGaN/GaN high electron mobility transistor(HEMT) ohmic contact of Ti/Al metal bilayer structure is prepared by thermal evaporation method. The Ti and Al ratios are 1∶2(20 nm/40 nm), 1∶5(20 nm/100 nm) and 1∶8(20 nm/160 nm), respectively. The AlGaN/GaN HEMT structures with different Ti and Al ratios are annealed using the same annealing time and different annealing temperatures. The electrode structure is analyzed by XRD, and the surface morphology of the electrode is observed by metallographic microscope. The experimental results show that under the same annealing time, the AlGaN/GaN HEMT structure with an annealing temperature of 800 ℃ and a Ti and Al ratio of 1∶5 forms a good ohmic contact.

关 键 词：高电子迁移率晶体管 欧姆接触 退火 比接触电阻率 

分 类 号：TN386.3[电子电信—物理电子学]