铝层厚度对铝诱导氢化非晶硅晶化的影响  

The Effects of Al Sublayer on Aluminium-induced Crystallization of Hydrogenated Amorphous Silicon

作　　者：王丽云 Wang Liyun(Shantou Lucky Film Co.,Ltd.,Guangdong,515064)

机构地区：[1]汕头乐凯胶片有限公司,广东515064

出　　处：《当代化工研究》2020年第6期40-41,共2页Modern Chemical Research

摘　　要：本文依据马普金属研究所对铝诱导晶化机制的理论基础,通过制备不同Al层厚度的Al/a-Si:H叠层样品的晶化结果来探究铝诱导氢化非晶硅的晶化机制。结果表明:随着Al层厚度增加,Al/a-Si:H叠层样品晶化得到的多晶硅晶粒尺寸增加,进一步实验验证了铝诱导非晶硅晶化过程发生在多晶铝晶界中。The effects of Al sublayer on aluminium-induced crystallization(AIC)of hydrogenated amorphous silicon(a-Si:H)were investigated by controlling the the grain size of Al sublayer.The sub/Al/a-Si:H bilayers were annealed at 600℃for 1 h.The polarizing microscope were applied to observe the morphology.Raman spectrum were used to confirm the presence and degree of crystallization of the micro areas observed from microscope.X-ray diffraction(XRD)patterns were used to confirm the crystal quality of a-Si:H and calculate the grain size of poly-Si.It follows that:larger grain size of the Al sublayer leads to larger grain size of polycrystalline silicon.

关 键 词：铝诱导晶化 氢化非晶硅 拉曼光谱 

分 类 号：TQ131[化学工程—无机化工]