单晶SiC的电助光催化抛光及去除机理  

Electrical Enhanced Photocatalysis Polishing and Removal Mechanism for Single Crystal SiC

作　　者：何艳[1] 苑泽伟[1] 段振云[1] 王雪 HE Yan;YUAN Zewei;DUAN Zhenyun;WANG Xue(School of Mechanical Engineering,Shenyang University of Technology,Shenyang,110870)

机构地区：[1]沈阳工业大学机械工程学院,沈阳110870

出　　处：《中国机械工程》2020年第4期403-409,共7页China Mechanical Engineering

基　　金：国家自然科学基金资助项目(51305278);中国博士后科学基金资助项目(2014M551124)。

摘　　要：为满足电子半导体等领域对SiC超光滑、无损伤和材料高效去除的要求,提出了电助光催化抛光SiC的新方法。研究了光催化剂种类及其pH值对抛光液氧化性和抛光效果的影响,讨论了材料的去除机理。结果表明:以p25型TiO_2为光催化剂配制抛光液所获得的最大氧化还原电位为633.11 mV,材料去除率为1.18μm/h,表面粗糙度Ra=0.218 nm;抛光后SiC表面氧化产物中,Si-C-O、Si-O和Si_4C_4O_4的含量明显增加,SiC表面被氧化并被机械去除是主要的材料去除方式。A new electrical enhanced photocatalysis polishing method for SiC was proposed herein to meet the requirements of ultra-smooth,non-damaging,and highly efficient in the fields of electronic semiconductor.Effects of different type photocatalysts and pH values on the oxygenation,and polishing performance of the slurries were studied.Material removal mechanism was discussed.The results show that the maximum oxidation-reduction potential of p25 type TiO 2 slurries is as 633.11 mV,material removal rate is as 1.18μm/h,and surface roughness Ra is as 0.218 nm.The proportion of oxidized species such as Si-C-O,Si-O,and Si 4C 4O 4 increase noticeably on the polished silicon carbide surfaces,which indicates that the oxidation combined with mechanical action is main material removal mechanism.

关 键 词：SIC 电助光催化抛光 TiO_2 抛光液 去除机理 

分 类 号：TH161[机械工程—机械制造及自动化]