紫外皮秒激光刻蚀体硅工艺研究  

UV Picosecond Laser Direct Etching on Bulk Silicon

作　　者：骆公序[1,2] 荆超 汪于涛 王丽 沈佳俊[1,2] Luo Gongxu;Jing Chao;Wang Yutao;Wang Li;Shen Jiajun(Shanghai Institute of Laser Technology,Shanghai 200233,China;Shanghai Key Laboratory of Laser Beam Micro-Processing,Shanghai 200233,China)

机构地区：[1]上海市激光技术研究所,上海200233 [2]上海市激光束精细加工重点实验室,上海200233

出　　处：《应用激光》2019年第6期1002-1005,共4页Applied Laser

基　　金：上海市科委资助项目(项目编号:18560730900,19511130400)。

摘　　要：针对体硅的加工应用,开展皮秒紫外激光三维刻蚀单晶硅工艺研究。通过工艺实验,得出在激光脉冲能量6μJ,固定XY点间距4μm,在单晶硅上刻蚀600μm×600μm方槽,单次去除的深度在1μm,单次加工用时0.5 s,加工的侧壁在14°,可以获得较好的200μm深度的三维结构。皮秒紫外激光体硅加工在工艺流程上更为简洁,加工效率高,对环境污染小,设备成本小。Investigation on the process of three-dimensional etching of single crystal silicon by picosecond ultraviolet laser was carried out to aim the application of processing the bulk silicon.As a good result,a three-dimensional structure with the depth of 200μm and the extent of 600μm×600μm can be obtained by optimizing laser parameters at pulse energy of 6μJ,constant laser spot distance of 4μm,processing angle in side wall of 14°,single removal depth of 1μm and single processing time of 0.5 s.UV picosecond laser processing on bulk silicon is more concise,it has more advantages such as high processing efficiency,low environmental pollution,and low equipment cost.

关 键 词：激光应用 体硅工艺 激光直接加工 紫外皮秒激光 

分 类 号：TN249[电子电信—物理电子学]