高k介质SOI LDMOS RTS噪声测试新方法  

New Measurement Method of RTS Noise in SOI LDMOS with High-k Gate Dielectric

作　　者：侯爱霞[1] HOU Aixia(School of Artificial Intelligence,Chongqing Creation Vocational College,Chongqing 402160,China)

机构地区：[1]重庆科创职业学院人工智能学院,重庆402160

出　　处：《电子器件》2020年第1期234-238,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(51275541)。

摘　　要：提出了一种基于智能温控的RTS噪声测试与分析新方法。该方法利用高k栅介质SOI LDMOS边界陷阱特性,首先建立了含有俘获时间常数、发射时间常数以及噪声幅度等参数的RTS噪声模型;然后设计了RTS噪声智能温控测试系统;最后对实测RTS噪声数据进行频谱变换,得到噪声功率谱密度并作分析。实验表明,该测试系统可以有效地获取高k栅介质SOI LDMOS的RTS噪声,具有良好的动态特性,且其本底噪声抑制率较高,较待测信号低两个数量级左右。The paper puts forward a new test and analysis method for RTS noise based on intelligent temperature control.The method takes advantage of the boundary trap characteristics of high k gate dielectric SOI LDMOS.Firstly,RTS noise model is established,which contains capture time constant,launch time constant,noise amplitude and other parameters;Secondly,the paper designs the SOI LDMOS RTS noise intelligent temperature control test system;Finally,the RTS noise data are transformed from the noise test system to noise spectrum,then the noise power spectral density is got and analyzed.The experimental results show that the measurement system can effectively and accurately obtain high k gate dielectric of SOI LDMOS RTS noise,it has good dynamic characteristics,and its background noise suppression rate is higher,small about two orders of magnitude of the measured signal.

关 键 词：RTS噪声 SOI LDMOS 噪声模型 氧化层陷阱 自动温控 

分 类 号：TN36[电子电信—物理电子学] TN386.1