Ga2O3/GaN/蓝宝石模板上β-Ga2O3薄膜的生长  

Growth ofβ-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template

作　　者：焦腾 李赜明 王谦 董鑫[1] 张源涛[1] 柏松[2] 张宝林[1] 杜国同[1] JIAO Teng;LI Ze-ming;WANG Qian;DONG Xin;ZHANG Yuan-tao;BAI Song;ZHANG Bao-lin;DU Guo-tong(State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices,Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]吉林大学电子科学与工程学院,集成光电子学国家重点联合实验室,吉林长春130012 [2]宽禁带半导体电力电子器件国家重点实验室,南京电子器件研究所,江苏南京210016

出　　处：《发光学报》2020年第3期281-287,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61774072,61734001,61674068);吉林省科技发展计划(20170204045GX);国家重点研发计划(2016YFB0401801,2016YFB0400103)资助项目。

摘　　要：为获得高质量的β-Ga2O3薄膜,将c面蓝宝石上生长的GaN薄膜进行高温氧化制成了Ga2O3/GaN/蓝宝石模板,进而在模板上利用金属有机化学气相沉积(MOCVD)工艺进行了β-Ga2O3薄膜的同质外延。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对样品的晶体结构、表面形貌等性质进行测试与分析。结果表明,该方法获得的β-Ga2O3薄膜晶体质量受GaN薄膜氧化效果与MOCVD工艺条件等因素影响较大。通过优化实验条件,得到了质量较高的β-Ga2O3薄膜。与蓝宝石上或GaN薄膜上异质外延得到的β-Ga2O3薄膜相比,薄膜的晶体质量明显提高。通过对比不同样品的晶体质量、表面形貌和制备过程,发现该方法成功地将β-Ga2O3薄膜在蓝宝石衬底或GaN/蓝宝石模板上异质外延转化为了Ga2O3/GaN/蓝宝石模板上的同质外延,有效地减小了β-Ga2O3薄膜和蓝宝石、GaN之间较大的晶格失配和热失配,有利于提高β-Ga2O3薄膜的晶体质量。To obtain high-qualityβ-Ga2O3 thin film,GaN thin film grown on c-plane sapphire is made into Ga2O3/GaN/sapphire template by thermal oxidation,and theβ-Ga2O3 thin film is grown on the template by metal-organic chemical vapor deposition(MOCVD).The crystal structure and surface morphology of the samples are measured and analyzed by X-ray diffraction,atomic force microscope and field emission scanning electron microscope.The results show that the crystal quality of theβ-Ga2O3 films is affected by GaN film oxidation effect and MOCVD process conditions greatly.By optimizing the experimental conditions,the high-qualityβ-Ga2O3 thin films are obtained.By comparing with the films grown on sapphire or GaN films,the crystal quality of theβ-Ga2O3 films is found improved obviously.We find that this method successfully transforms the heteroepitaxy of theβ-Ga2O3 film on sapphire substrate or GaN/sapphire template into the homoepitaxy of that on Ga2O3/GaN/sapphire template,effectively reduces the large lattice mismatch and thermal mismatch betweenβ-Ga2O3 film,sapphire and GaN,and is beneficial to improve the crystal quality ofβ-Ga2O3 film.

关 键 词：氧化镓 高温氧化 金属有机化学气相沉积 

分 类 号：TP394.1[自动化与计算机技术—计算机应用技术] TH691.9[自动化与计算机技术—计算机科学与技术]