GaAsN/GaAs量子阱在1 MeV电子束辐照下的退化规律  

Degradation of GaAsN/GaAs Quantum Well Under 1 MeV Electron Beam Irradiation

作　　者：雷琪琪 郭旗[1] 艾尔肯·阿不都瓦衣提 玛丽娅·黑尼 李豫东[1] 王保顺 王涛 莫镜辉 庄玉 陈加伟 LEI Qi-qi;GUO Qi;Aierken ABUDUWAYITI;Maliya HEINI;LI Yu-dong;WANG Bao-shun;WANG Tao;MO Jing-hui;ZHUANG Yu;CHEN Jia-wei(Xinjiang Key Laboratory of Electronic Information Materials and Devices, Key Laboratory of FunctionalMaterials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute ofPhysics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China;School of Energy and Environment Science, Yunnan Normal University, Kunming 650500, China;School of Physics and Technology, Xinjiang University, Urumqi 830046, China)

机构地区：[1]中国科学院新疆理化技术研究所,中国科学院特殊环境功能材料与器件重点实验室,新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [2]中国科学院大学,北京100049 [3]云南师范大学能源与环境科学学院,云南昆明650500 [4]新疆大学物理科学与技术学院,新疆乌鲁木齐830046

出　　处：《发光学报》2020年第5期603-609,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61534008);中国科学院新疆理化技术研究所所长基金(Y55B171101);中科院西部之光(2017-XBQNXZ-B-004);电子元器件可靠性物理及其应用技术重点实验室开放基金(ZHD201705)资助。

摘　　要：为研究GaAsN/GaAs量子阱在电子束辐照下的退化规律与机制,对GaAsN/GaAs量子阱进行了不同注量(1×1015,1×1016 e/cm2)1 MeV电子束辐照和辐照后不同温度退火(650,750,850℃)试验,并结合Mulassis仿真和GaAs能带模型图对其分析讨论。结果表明,随着电子注量的增加,GaAsN/GaAs量子阱光学性能急剧降低,注量为1×1015 e/cm2和1×1016 e/cm2的电子束辐照后,GaAsN/GaAs量子阱PL强度分别衰减为初始值的85%和29%。GaAsN/GaAs量子阱电子辐照后650℃退火5 min,样品PL强度恢复到初始值,材料带隙没有发生变化。GaAsN/GaAs量子阱辐照后750℃和850℃各退火5 min后,样品PL强度随退火温度的升高不断减小,同时N原子外扩散使得样品带隙发生约4 nm蓝移。退火温度升高没有造成带隙更大的蓝移,这是由于进一步的温度升高产生了新的N—As间隙缺陷,抑制了N原子外扩散,同时导致GaAsN/GaAs量子阱光学性能退化。The radiation effects of MBE grown GaAsN/GaAs quantum well irradiated by 1 MeV electron with different dose(1×1015,1×1016 e/cm2)and post thermal annealing(650,750,850℃)have been studied.The degradation mechanism and annealing effects were discussed by Mulassis simulation and GaAs energy bandgap model.The results show that the GaAsN/GaAs quantum well PL intensity significantly decreased with the increase of electron does.The PL intensity of the GaAsN GaAs quantum well decayed to 85%and 29%of the initial value after electron irradiation with doses of 1×1015 e/cm2 and 1×1016 e/cm2,respectively.The PL intensity of GaAsN/GaAs quantum well returned to original value after annealing at 650℃for 5 min,and the bandgap of the material remained unchanged.The PL intensity of GaAsN/GaAs samples decreased as the annealing temperature increased after annealed at 750℃and 850℃for 5 min,and the bandgap blue shifted about 4 nm due to the diffusion of N atoms from GaAsN quantum well to GaAs barrier layer.The increase of annealing temperature did not cause additional blue shifts of the band gap.This was due to the further increase in temperature,which caused new N—As defects,suppressed N-atom diffusion,and degraded the optical properties of GaAsN/GaAs quantum well.

关 键 词：稀氮 光致发光 电子辐照 GAASN 退火 

分 类 号：TN304.23[电子电信—物理电子学] O475[理学—半导体物理]