基于Ga2O3的场效应器件研究进展  

Overview of field effect transistors based on Ga2O3

作　　者：高灿灿 马奎 杨发顺 Gao Cancan;Ma Kui;Yang Fashun(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵州贵阳550025 [2]半导体功率器件可靠性教育部工程研究中心,贵州贵阳550025

出　　处：《电子技术应用》2020年第5期22-26,共5页Application of Electronic Technique

基　　金：半导体功率器件可靠性教育部工程研究中心开放基金(010201)。

摘　　要：氧化镓(Ga2O3)作为第三代宽禁带半导体材料,由于其超宽带隙、高击穿场强以及高巴利加优值等优点,广泛应用于大功率器件等领域,已成为近几年来国内外科研人员研究的热点。主要介绍了Ga2O3材料的特性,总结了基于Ga2O3的场效应晶体管(FET)的研究进展,对Ga2O3功率器件的发展进行了思考归纳。As the third-generation wide bandgap semiconductor material,gallium oxide(Ga2O3)has been widely used in high-power devices and other fields due to its advantages such as ultra-wide band gap,high breakdown field strength and high BFOM.Hotspots of research by researchers at home and abroad.This paper mainly introduces the characteristics of Ga2O3 materials,summarizes the research progress of field-effect transistors(FETs)based on Ga2O3,and summarizes the development of Ga2O3 power devices.

关 键 词：GA2O3 宽禁带半导体 场效应晶体管 

分 类 号：TN4[电子电信—微电子学与固体电子学] O48[理学—固体物理]