碳化硅功率器件技术综述与展望  

A Recent Review on Silicon Carbide Power Devices Technologies

作　　者：盛况[1] 任娜[1] 徐弘毅[1] SHENG Kuang;REN Na;XU Hongyi(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,Zhejiang Province,China)

机构地区：[1]浙江大学电气工程学院,浙江省杭州市310027

出　　处：《中国电机工程学报》2020年第6期1741-1752,共12页Proceedings of the CSEE

基　　金：国家重点研发计划项目(2018YFB0905703);国家自然科学基金项目(51777187,U1766222)。

摘　　要：碳化硅(silicon carbide,Si C)器件作为一种宽禁带半导体器件,具有耐高压、高温,导通电阻低等优点。近20年来,Si C器件是国内外学术界和企业界的一大研究热点,该文对近些年来不同Si C器件的发展进行分类梳理,介绍二极管、结型场效应晶体管、金氧半场效晶体管、绝缘栅双极型晶体管及门极可断晶闸管器件,并对比分析器件结构及参数性能,针对关键问题展开论述。最后,对SiC器件近年的发展进行总结和展望。Silicon carbide power devices has the advantage of blocking higher voltage,working at higher temperature and having lower conduction resistance.For more than 20 years,it has attracted extensive attention from many domestic and oversea research institutions and commercial companies.Firstly,this paper classified different silicon carbide devices and described their developments in recent years.Diodes,junction field effect transistor(JFET),metal-oxidesemiconductor field effect transistor(MOSFET),insulator gate bipolar transistor(IGBT)and gate turn-off thyristor(GTO)devices were discussed and their performances were compared.Finally,the development of silicon carbide devices was summarized and the trend of development was given.

关 键 词：碳化硅 功率器件 二极管 结型场效应晶体管 金氧半场效晶体管 绝缘栅双极型晶体管 门极可断晶闸管 

分 类 号：TM461.5[电气工程—电器]