半桥结构中的SiC MOSFET串扰电压建模研究  

Modeling of SiC MOSFET Crosstalk Voltage in Half Bridge Circuit

作　　者：陈滢 李成敏[1] 鲁哲别 罗皓泽[1] 李楚杉[1] 李武华[1] 何湘宁[1] CHEN Ying;LI Chenmin;LU Zhebie;LUO Haoze;LI Chushan;LI Wuhua;HE Xiangning(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,Zhejiang Province,China)

机构地区：[1]浙江大学电气工程学院,浙江省杭州市310027

出　　处：《中国电机工程学报》2020年第6期1775-1786,共12页Proceedings of the CSEE

基　　金：国家自然科学基金(面上基金项目)(51677166);国家自然科学基金联合基金项目(U183420013)。

摘　　要：SiC MOSFET凭借着低开关损耗、高工作频率与高工作温度点等优点,逐渐在高效率、高功率密度与高温的应用场合取代传统的硅功率器件。然而,在高速开关中带来的栅极串扰现象严重制约SiC器件的开关速度。传统的串扰抑制方法重点关注由栅极–漏极寄生电容引入的干扰电压,往往通过减小驱动回路阻抗的方式来降低串扰电压。该文基于SiC MOSFET器件的开关模态,提出考虑共源电感的分段线性化串扰电压模型。该模型基于器件数据手册及双脉冲实验提取的参数,考虑栅极–漏极电容、共源电感、体二极管反向恢复等非理想因素的影响。对比不同电压点、电流点与电阻值下实验与模型的输出结果。该模型表明,串扰电压是由器件栅极–漏极电容、共源电感与驱动回路阻抗共同作用的结果。单一降低驱动回路阻抗的方式对串扰电压的抑制效果有限。基于提出的模型,该文给出串扰电压抑制的指导方法,可直接用于SiC MOSFET驱动电路的设计。With the advantages of low switching loss,high operating frequency and high operating temperature,Si C MOSFET gradually replaces traditional silicon power devices in high efficiency,high power density and high temperature applications.However,the crosstalk problem in gate drive caused by high-speed switch seriously restricts the switching speed of Si C devices.Traditional crosstalk suppression methods focus on the interference voltage introduced by gate-drain parasitic capacitance,which is often reduced by reducing the gate circuit impedance.Based on the switching mode of Si C MOSFET devices,a piecewise linear crosstalk voltage model considering common inductance was proposed.The model was based on the parameters extracted from the device data manual and double-pulse experiment,and considered the influence of non-ideal factors such as gate-drain capacitance,common-source inductance and diode reverse recovery.The results of experiments and models at different voltage points,current points and resistance points were compared.The model shows that the crosstalk voltage is the result of the interaction of gate-drain capacitance,common source inductance and impedance of driving circuit.A single way to reduce the gate circuit impedance has limited effect on the suppression of crosstalk voltage.Based on the proposed model,this paper presented a guidance method for crosstalk voltage suppression,which can be directly used in the design of driving circuit of SiC MOSFET.

关 键 词：SIC MOSFET 串扰 共源电感 SiC驱动 

分 类 号：TM464[电气工程—电器]