氮分压对Ta-Ru-N薄膜微观组织和性能的影响  

Effects of Nitrogen Partial Pressure on Microstructure and Properties of Ta-Ru-N Thin Films

作　　者：郭帅东 王广欣[1,2,3] 李浩翔 孙浩亮[1,2,3] 逯峙[1,2,3] 唐坤[1,2,3] GUO Shuaidong;WANG Guangxin;LI Haoxiang;SUN Haoliang;LU Zhi;TANG Kun(Materials Science&Engineering School,Henan University of Science&Technology,Luoyang 471023,China;Henan Engineering Research Center for High Purity Materials&Sputtering Targets,Henan University of Science&Technology,Luoyang 471023,China;Luoyang Key Laboratory of High Purity Materials&Sputtering Targets,Henan University of Science&Technology,Luoyang 471023,China;College of Animal Science&Technology,Guangxi University,Nanning 530004,China)

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471023 [2]河南科技大学河南省高纯材料及溅射靶材工程研究中心,河南洛阳471023 [3]河南科技大学洛阳市高纯材料及溅射靶材重点实验室,河南洛阳471023 [4]广西大学动物科学技术学院,广西南宁530004

出　　处：《河南科技大学学报（自然科学版）》2020年第4期7-12,M0002,M0003,共8页Journal of Henan University of Science And Technology:Natural Science

基　　金：国家自然科学基金项目(U1504516);河南省高等学校重点科研基金项目(16A430016);河南省高等学校学科创新引智基地基金项目。

摘　　要：采用反应磁控溅射技术,在单晶Si(100)面基底上制备了4个氮分压条件下Ta-Ru-N扩散阻挡层薄膜。通过X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、能谱(EDS)、透射电子显微镜(TEM)、原子力显微镜(AFM)以及四探针电阻测试仪(FPP),对所制备薄膜的相结构、表面形貌和电学性能进行了表征,研究了氮分压对薄膜微观组织和性能的影响。研究结果表明:制备的Ta-Ru-N薄膜为非晶态,适量氮气的加入能够提高薄膜表面的平整度,薄膜方阻随着氮分压的增加而逐渐增加。Ta-Ru-N diffusion barrier films were prepared on Si(100)single crystal substrates by reactive magnetron sputtering in 4 kinds of nitrogen partial pressure.The phase structure,surface morphology and electronic properties of the films were investigated by means of X-ray diffraction(XRD),field-emission scanning electron microscopy(FESEM),energy-dispersive X-ray spectroscopy(EDS),transmission electron microscopy(TEM),atomic force microscopy(AFM)and four-point probe(FPP).The effects of nitrogen partial pressure on the microstructure and properties of the films was studied.The results show that the prepared Ta-Ru-N films are amorphous,and the moderate addition of nitrogen can improve the flatness of the film surface.Square resistance of the Ta-Ru-N film increases with the increase of nitrogen partial pressure.

关 键 词：磁控溅射 扩散阻挡层 Ta-Ru-N 方块电阻 

分 类 号：TB43[一般工业技术]