SOI抗辐射先进技术研究  

Research on Advanced Radiation Hardening Technology of SOI

作　　者：藏鑫[1] 纪旭明 谢儒彬[1] ZANG Xin;JI Xuming;XIE Rubin(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi Jiangsu 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《微处理机》2020年第3期5-9,共5页Microprocessors

摘　　要：SOI以其独特的隔离埋层结构实现了器件、电路的全介质隔离,因此具有漏电小、电容小、免疫闩锁、响应快、功耗低等优点,在快速数字电路、抗辐射领域具有良好的应用基础。基于对SOI技术发展的前沿方案的介绍,探讨沟道应变技术以及薄埋层技术如何来优化PD SOI的浮体效应、自热效应,提高SOI的电路的速度,降低寄生效应以及功耗损失。SOI技术对现有成熟的CMOS技术具有很高的兼容性,发展可行性巨大,必将打破体硅的极限,引发硬件行业的重大革命。SOI realizes full dielectric isolation of devices and circuits with its unique isolation buried layer structure.Therefore,SOI has the advantages of small leakage,small capacitance,immune latch-up,fast response,low power consumption,etc.It has a good application foundation in the field of fast digital circuits and radiation resistance.Based on the introduction of the latest development of SOI technology,this paper discusses how channel strain technology and thin buried layer technology can optimize the floating body effect and self-heating effect of PD SOI,improve the circuit speed of SOI,and reduce parasitic effect and power loss.SOI technology has high compatibility with the existing mature CMOS technology and has great development feasibility.It will definitely break the limit of bulk silicon and trigger a major revolution in the hardware industry.

关 键 词：SOI辐射 单粒子 总剂量 应变硅 

分 类 号：TN432[电子电信—微电子学与固体电子学]