基于双极载流子导电的新型恒流器件  

Novel Current Regulator Device Based on Bipolar Carrier Conduction

作　　者：何林蓉 乔明[1] HE Linrong;QIAO Ming(University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学,成都610054

出　　处：《电子与封装》2020年第5期66-70,共5页Electronics & Packaging

摘　　要：提出了一种基于双极载流子导电、具有低开启电压VK和高反向击穿电压BVR的恒流器件,并进行了初步的试验验证。利用Tsuprem4和Medici仿真工具对器件的恒定电流IS、开启电压VK、正向击穿电压BVF和反向击穿电压BVR等电学参数进行了仿真,优化了外延层电阻率ρepi、外延层厚度Tepi、JFET注入剂量DJFET、P-well注入窗口间距WJFET等参数。试验结果显示,该器件工作于正向时,开启电压VK约为1.6 V,恒定电流IS约为31 mA,正向击穿电压BVF为55 V;该器件工作在反向时,反向击穿电压BVR约为200 V。A constant current device based on bipolar carrier conduction,with low threshold voltage VK and high reverse breakdown voltage BVR was proposed and initially experimentally demonstrated.Some electrical parameters such as steady current IS,threshold voltage VK,forward breakdown voltage BVF and reverse breakdown voltage BVR were simulated through Tsuprem4 and Medici simulation tools,and the device parameters,such as epitaxial layer resistivityρepi and epitaxial layer thickness Tepi,JFET implantation dose DJFET,P-well implantation open windows spacing WJFET were optimized.The experimental results show that the device presents the threshold voltage VK about 1.6 V,the steady current IS about 31 mA and the forward breakdown voltage BVF of 55 V under forward conduction mode;when the device works under reverse blocking mode,the reverse breakdown voltage BVR is about 200 V.

关 键 词：恒流器件 恒定电流 开启电压 击穿电压 

分 类 号：TN31[电子电信—物理电子学]