GaN基量子阱结构的界面光学声子及其电声相互作用性质的研究  

The properties of optical phonon and electron-phonon interaction in GaN-based quantum well structures

作　　者：黄文登[1] 王瑞 HUANG Wendeng;WANG Rui(School of Physics and Telecommunication Engineering,Shaanxi University of Technology,Hanzhong 723000,China)

机构地区：[1]陕西理工大学物理与电信工程学院,陕西汉中723000

出　　处：《高师理科学刊》2020年第5期36-41,共6页Journal of Science of Teachers＇College and University

基　　金：陕西省自然科学基金项目(2019JM-213);陕西省教育厅项目(18JK0154)。

摘　　要：GaN基量子阱结构在光电子领域具有较为重要的应用前景,理解其物理性质是加快应用的关键之一.研究了GaN基量子阱结构的光学声子特性及其电声相互性质,给出了GaN基量子阱结构中光学声子及其电声相互作用的基本理论,分析了影响界面光学声子的频率和电声耦合强度的相关因素,并对纤锌矿Al0.8Ga0.2N/GaN/Al0.8Ga0.2N,GaN/In0.8Ga0.2N/GaN对称单量子阱的界面光学声子及其电声相互作用的电声耦合强度进行了数值计算.结果表明,界面光学声子在长波区域色散较为明显,电声耦合强度在小波矢区域内最强.GaN-based quantum well structures have important applications in optoelectronic devices.It is very important to understand their physical properties in GaN-based quantum well structures.Mainly studies the optical phonon properties and electron-phonon interaction in GaN based quantum well structure.The frequency of interface optical phonon and electron-phonon coupling strength in Al0.8 Ga0.2 N/GaN/Al0.8 Ga0.2 N,GaN/In0.8 Ga0.2 N/GaN wurtzite quantum well structure was calculated,the factors influencing the interface optical phonon frequency and the electron phonon coupling strength are analyzed.The numerical results suggest that the interface optical phonons are more dispersive in the region of the long wave,the electron phonon coupling strengths is strongest in the area of small wave vector.

关 键 词：光学声子 电声相互作用 量子结构 

分 类 号：O471.1[理学—半导体物理]