集成电路失效定位技术现状和发展趋势  

Current Status and Development Trends of Failure Localization Techniques of ICs

作　　者：陈选龙 王有亮[1,2] 方建明 林晓玲 倪毅强[1,2] Chen Xuanlong;Wang Youliang;Fang Jianming;Lin Xiaoling;Ni Yiqiang(The 5th Electronics Research Institute,Ministry of Industry and Information Technology,Guangzhou 510610,China;Reliability Research and Analysis Centre,China CEPREI Laboratory,Guangzhou 510610,China;School of Electronic and Communication,Guangdong Mechanical and Electrical Polytechnic,Guangzhou 510550,China)

机构地区：[1]工业和信息化部电子第五研究所,广州510610 [2]中国赛宝实验室可靠性研究分析中心,广州510610 [3]广东机电职业技术学院电子与通信学院,广州510550

出　　处：《半导体技术》2020年第5期329-337,370,共10页Semiconductor Technology

基　　金：广东省重点领域研发计划资助项目(2019B010128002);工业和信息化部质量可靠性设计分析技术突破重点项目(TC190A4DA/6)。

摘　　要：集成电路(IC)失效分析包含了不同的分析流程,但所有的步骤都是以失效定位和故障隔离作为第一步工作。失效定位指的是不断地缩小半导体器件故障范围直至可以进行破坏性物理分析的过程。根据IC的结构特点和分析思路,将整个失效分析流程中失效定位分为封装级失效定位、器件级失效定位和物理分析失效定位。通过定位技术结合案例分析的形式,重点介绍了时域反射、X射线断层扫描、扫描声学分析、锁相红外成像、光发射分析、激光激发技术和电压衬度等关键的失效定位技术原理和方法。总结了不同失效定位技术的适用范围和面临的挑战。同时,也对未来失效分析技术发展趋势进行了展望。Integrated circuit(IC) failure analysis involves different analysis flows, but all steps start with failure localization and fault isolation. Failure localization refers to the process of continuously narrowing down the fault range of semiconductor devices to the extent where a destructive physical analysis can be performed. According to the structure characteristic of IC and analysis approach, the fai-lure localization in the full failure analysis flow is classified into three categories including package level failure localization, device level failure localization and physical analysis failure localization. In the form of combining localization techniques with case studies, the principles and methodologies of key failure localization techniques are introduced in detail, such as time domain reflectometry, X-ray computed tomography, scanning acoustic analysis, lock-in thermography, photon emission analysis, laser stimulation and voltage contrast. The application scope and future challenges of different failure localization techniques are summarized, and the future development trend of failure analysis technology is prospected.

关 键 词：集成电路(IC)失效定位 物理失效分析 电压衬度 光发射显微镜 热激光激发 

分 类 号：TN406[电子电信—微电子学与固体电子学] TN407