PVD AlON缓冲层的GaN外延层生长  

Growth of GaN Epitaxial Layer on AlON Buffer Layer by PVD

作　　者：寻飞林 Xun Feilin(Xiamen San'an Optoelectronics Technology Co.,Ltd.,Xiamen 361009,China)

机构地区：[1]厦门市三安光电科技有限公司,福建厦门361009

出　　处：《半导体技术》2020年第5期379-382,403,共5页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2017YFB0403102)。

摘　　要：采用物理气相沉积(PVD)技术在4英寸(1英寸=2.54 cm)图形化蓝宝石衬底(PSS)上沉积4种AlN或AlON薄膜样品,使用金属有机化学气相沉积(MOCVD)在样品上外延生长GaN。通过X射线衍射(XRD)、扫描电子显微镜(SEM)与高分辨率透射电子显微镜(HR-TEM)对GaN外延层进行表征分析。实验结果表明:在PSS上溅镀AlN缓冲层时,AlN/蓝宝石界面处的氧浓度决定GaN样品的生长模式。通入氧形成的AlON能够减少GaN晶体在PSS侧壁生长,提高GaN晶体质量。GaN/AlON或(AlN/AlON)/PSS结构的GaN的螺位错密度为4.40×10^7~5.03×10^7 cm^-2,刃位错密度为1.70×10^8~1.71×10^8 cm^-2;而GaN/AlN或(AlON/AlN)/PSS结构的GaN的螺位错密度为2.55×10^8~7.65×10^8 cm^-2,刃位错密度为1.38×10^10~2.89×10^10 cm^-2;GaN/AlN/PSS结构相比GaN/AlON/PSS结构的GaN位错密度高1~2个数量级。Four kinds of AlN or AlON thin film samples were grown on the 4 inch(1 inch=2.54 cm) patterned sapphire substrate(PSS) by physical vapor deposition(PVD) technique, and the GaN layers were epitaxially grown on these samples by metal organic chemical vapor deposition(MOCVD). The GaN epitaxial layers were characterized and analyzed by X-ray diffraction(XRD), scanning electron microscope(SEM) and high resolution transmission electron microscope(HR-TEM). The experimental results show that the oxygen concentration at the AlN/sapphire interface determines the growth mode of GaN samples when sputtering the AlN buffer layer on the PSS. The AlON formed by inletting oxygen can suppress the growth of GaN on the side wall of PSS and improve the crystal quality of GaN. For the GaN/AlON or(AlN/AlON)/PSS structure, the screw and edge dislocations densities of GaN were 4.40×10^7-5.03×10^7 cm^-2 and 1.70×10^8-1.71×10^8 cm^-2, respectively;while for the GaN/AlN or(AlON/AlN)/PSS structure, the screw and edge dislocations densities of GaN were 2.55×10^8-7.65×108 cm^-2 and 1.38×10^10-2.89×10^10 cm^-2, respectively. The GaN dislocation density of the GaN/AlN/PSS structure is 1-2 orders higher than that of the GaN/AlON/PSS structure.

关 键 词：GAN ALON ALN 图形化蓝宝石衬底(PSS) 物理气相沉积(PVD) 

分 类 号：TN304.055[电子电信—物理电子学] TN304.23