薄膜体声波滤波器AlN压电薄膜的ICP刻蚀研究  

Inductively Coupled Plasma Etching of AlN Film for Fabrication of 5G Networks & Devices: A Methodological Study

作　　者：侯卓立 周燕萍 査强 李茂林 左超 杨秉君 吴胜利[1] Hou Zhuoli;Zhou Yanping;Zha Qiang;Li Maolin;Zuo Chao;Yang Bingjun;Wu Shengli(Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi’an Jiaotong University,Xi’an 710049,China;ULVAC Research Center Suzhou Co.,Ltd,Suzhou 215026,China;Nano Fabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,西安710049 [2]爱发科(苏州)技术研究开发有限公司,苏州215026 [3]中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台,苏州215123

出　　处：《真空科学与技术学报》2020年第3期220-225,共6页Chinese Journal of Vacuum Science and Technology

摘　　要：随着5G通信技术的发展,通信频段不断提高,以氮化铝(AlN)为压电薄膜材料的薄膜体声波滤波器作为目前唯一可集成的射频前段滤波器成为研究热点之一。本文开展AlN材料刻蚀工艺的实验研究,实验中采用光刻胶作为刻蚀掩膜,Cl2/BCl3作为刻蚀工艺气体,通过一系列工艺影响参数调整及相应刻蚀结果分析,获得了ICP源功率、RF偏压功率、腔体压强和BCl3气体流量对AlN材料和光刻胶掩膜刻蚀速率、刻蚀形貌的影响规律。通过综合优化工艺参数,最终得到了侧壁平坦、表面光滑的空气隙型薄膜体声波滤波器三明治结构。We addressed the inductively coupled plasma(ICP) etching technology of AlN piezoelectric film,an advanced electronic material for fabrication of film bulk acoustic resonator(FBAR) of 5 G networks & devices,particularly integrated RF front-end filter.The influence of the key ICP etching conditions,including the pressure,Cl2/BCl3 flow-rate ratio,ICP power,and RF bias power,on the etching-rate,geometry and surface morphology of the etched AIN-coating was investigated.The results show that the key ICP etching conditions all had a major impact.For example,as the ICP-power(BCl3 flow-rate) increased,the etching-rate changed in an increase-decrease manner;a higher RF-bias power improved reaction-rate and sidewall steepness,accompanied by stronger anisotropic etching and more damages.Under the optimized ICP etching conditions,a prototyped air-gap FBAR filter,in a well-defined sandwich structure with steep flat sidewalls and smooth surfaces,was fabricated.

关 键 词：薄膜体声波滤波器 感应耦合等离子体刻蚀 氮化铝 刻蚀速率 

分 类 号：TN305[电子电信—物理电子学]