多层圆片级堆叠THz硅微波导结构的制作  

Fabrication of a THz Silicon Micro-Waveguide Structure with Multilayer Wafer-Level Stack

作　　者：杨志[1,2] 董春晖 柏航 姚仕森 程钰间[3] Yang Zhi;Dong Chunhui;Bai Hang;Yao Shisen;Cheng Yujian(Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China;The 13 Research Institute,CETC,Shijiazhuang 050051,China;School of Electronic Science and Engineering,UESTC,Chengdu 611731,China)

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]电子科技大学电子科学与工程学院,成都611731

出　　处：《微纳电子技术》2020年第4期328-332,共5页Micronanoelectronic Technology

摘　　要：基于微电子机械系统(MEMS)工艺,提出一种多层圆片堆叠的THz硅微波导结构及其制作方法。为了验证该结构在制作THz无源器件中的优势,基于6层圆片堆叠的硅微波导结构,设计了一种中心频率365 GHz、带宽80 GHz的功率分配/合成结构,并对其进行了仿真。研究了制作该结构的工艺流程,攻克了工艺过程中的关键技术,包括硅深槽刻蚀技术和多层热压键合技术,并给出了工艺结果。最终实现了多层圆片堆叠功率分配/合成结构的工艺制作和测试。测试结果表明,尽管样品的插入损耗较仿真值增加3 dB左右,考虑到加工误差和夹具损耗等情况,样品主要技术指标与设计值较为一致。Based on micro-electromechanical system(MEMS)technology,the structure of a terahertz(THz)silicon micro-waveguide with multilayer wafer-level stack and its fabrication method were presented.In order to verify the advantages of the structure in THz passive devices,based on silicon micro-waveguide structure with 6-layer wafer stack,apower divider/combiner structure with a center frequency of 365 GHz and a bandwidth of 80 GHz was designed and simulated.The process flow for the fabrication of the structure was investigated,and the key technologies in the process were conquered,such as silicon deep trench etching and multilayer thermocompression bonding technology.And the process results were given.Finally,the fabrication and measurement of the power divider/combiner structure with multilayer wafer-level stack were realized.The test results show that although the insertion loss of the sample increases by about 3 dB compared with the simulation value,in the case of considering the machining error and fixture loss,the main technique indexes basically accord with the design values.

关 键 词：微电子机械系统(MEMS) 太赫兹(THz) 波导 硅深槽刻蚀 热压键合 

分 类 号：TN305[电子电信—物理电子学]