基底偏压对磁控溅射沉积MoSi2薄膜结构及力学性能的影响  

Effects of Substrate Bias Voltage on Structure and Mechanical Properties of MoSi2 Sputtered Thin Film

作　　者：易旭阳 李继文[1] 刘伟[1] 魏世忠[2] 徐流杰[2] 杨景红 YI Xuyang;LI Jiwen;LIU Wei;WEI Shizhong;XU Liujie;YANG Jinghong(Materials Science&Engineering School,Henan University of Science&Technology,Luoyang 471000,China;National&Local Joint Engineering Research Center for Wear&Forming Control of Metallic Materials,Henan University of Science&Technology,Luoyang 471000,China;Achemetal Tungsten&Molybdenum Co.,Ltd.,Luoyang 471822,China)

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471000 [2]河南科技大学金属材料磨损与成型控制国家与地方联合工程研究中心,河南洛阳471000 [3]洛阳爱科麦钨钼科技股份有限公司,河南洛阳471822

出　　处：《河南科技大学学报（自然科学版）》2020年第5期1-7,12,M0002,共9页Journal of Henan University of Science And Technology:Natural Science

基　　金：国家“十三五”重点研发计划基金项目(2017YFB0306000);国家自然科学基金项目(U1704152)。

摘　　要：针对不同基底偏压下制备的MoSi2薄膜呈现不同结构及性能的问题,采用直流磁控溅射工艺,在单晶硅表面制备了MoSi2薄膜。采用X射线衍射仪、场发射扫描电镜、原子力显微镜和纳米压痕仪等分析手段,探究了基底偏压对磁控溅射沉积MoSi2薄膜形貌结构、生长特性、组织和性能的影响。研究结果表明:不同基底偏压制备的薄膜主要为六方相MoSi2,且存在明显的(111)面择优取向。基底偏压和基底温度的协同作用,使薄膜的自退火效应更加明显。随着基底偏压的增加,薄膜的结晶效果显著提高,并出现四方相MoSi2和Mo5Si3相。基底偏压的增加使薄膜的厚度、弹性模量及纳米硬度先上升后下降。当基底偏压为-100 V时,薄膜的厚度、弹性模量及纳米硬度达到最大值,分别为1440 nm、192.5 GPa和10.56 GPa。In view of the different structure and properties of MoSi2 thin films prepared under different substrate bias voltage,MoSi2 thin films were prepared on the surface of single crystal silicon by direct current magnetron sputtering.By means of X-ray diffraction(XRD),field emission scanning electron microscopy(FSEM),atomic force microscopy(AFM)and nano indentation,the effects of substrate bias on the morphology,growth characteristics,microstructure and properties of MoSi2 thin films deposited by magnetron sputtering were investigated.The results show that the thin films prepared by different substrate bias are mainly hexagonal phase MoSi2,and there is an obvious(111)preferred orientation.The synergistic effect of substrate bias and substrate temperature makes the self-annealing effect of the thin film more obvious.With the increase of substrate bias,the crystallization effect of the thin film is significantly improved,and the tetragonal phase MoSi2 and Mo5 Si3 phase appear in the thin film.With the increase of substrate bias,the thickness,modulus of elasticity and nano-hardness of the thin film first increase and then decrease.When the substrate bias is-100 V,the thickness,modulus of elasticity and nano-hardness of the thin film reach the maximum with 1440 nm,192.5 GPa and 10.56 GPa,respectively.

关 键 词：直流磁控溅射 MoSi2薄膜 基底偏压 薄膜形貌 弹性模量 纳米硬度 

分 类 号：TG146.41[一般工业技术—材料科学与工程]