As/P气氛转换对InGaAs/InP异质结界面的影响研究  

Effect of As/P Atmospheric Transition on InGaAs/InP Heterojunction Interface

作　　者：王伟 高汉超[1] 于海龙 马奔 尹志军[1] 李忠辉[1] WANG Wei;GAO Hanchao;YU Hailong;MA Ben;YIN Zhijun;LI Zhonghui(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices In⁃stitute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2020年第2期145-148,158,共5页Research & Progress of SSE

摘　　要：采用分子束外延(MBE)方法,在半绝缘InP(100)衬底上外延InGaAs/InP超晶格结构。通过优化As、P转换时间,研究了As、P气氛转换对InGaAs/InP异质结界面特性的影响。经原子力显微镜测试和X射线衍射谱分析,样品在关P阀5 s、开As阀5 s的生长条件下,表面均方根粗糙度(RMS)为0.205 nm,单边卫星峰达20级,一级卫星峰的半高宽(FWHM)为145.05 arc sec,表明界面控制良好。The molecular beam epitaxy(MBE)method was used to epitaxially grow InGaAs/InP superlattice structure on a semi-insulating InP(100)substrate.By optimizing As and P transition time,the influence of As and P atmosphere transition on the characteristics of InGaAs/InP heterojunction interface was studied.Atomic force microscopy and X-ray diffraction spectrum analysis show that under the growth conditions of the P valve closing for 5 s and the As valve opening for 5 s,the surface root mean square(RMS)roughness is 0.205 nm,the unilateral satellite peaks reach 20 levels,and the full-width at half maximum(FWHM)of the first-order satellite peak is 145.05 arc sec,indicating that the interface is well controlled.

关 键 词：分子束外延 双异质结双极型晶体管 INGAAS/INP 界面 

分 类 号：TN304.2[电子电信—物理电子学]