利用C-V法研究GaN基蓝光LED的多量子阱结构  

Study on the multiple quantum well structure of GaN-based LED using C-V measurement

作　　者：郑晓思 符斯列[1] ZHENG Xiao-si;FU Si-lie(School of Physics and Telecommunication Engineering,South China Normal University,Guangzhou 510006,China)

机构地区：[1]华南师范大学物理与电信工程学院,广东广州510006

出　　处：《物理实验》2020年第5期1-5,共5页Physics Experimentation

基　　金：国家自然科学基金资助(No.10575039);广东省自然科学基金资助(No.S2013010012548);广东省高校特色创新项目资助(No.2018KTSCX121)。

摘　　要：利用C-V测量法研究了GaN基高亮度蓝光发光二极管的InGaN/GaN多量子阱结构(MQWs),通过样品的C-V曲线及对应的杂质浓度分布曲线得出MQWs的结构特性.实验结果表明:MQWs为5个周期的InGaN/GaN多量子阱.室温下InGaN阱层的平均阱宽为2.00 nm,阱层的平均杂质浓度为7.12×1018 cm^-3,GaN垒层的平均垒宽为12.32 nm,垒层的平均杂质浓度为0.82×1018 cm^-3.温度降低,InGaN阱宽变窄,杂质浓度增大,而GaN垒宽变宽,杂质浓度降低.The C-V measurement method was further applied to the measurement of InGaN/GaN multiple quantum well structure(MQWs),the structure characteristics of MQWs was obtained by the C-V curve of the sample and the corresponding impurity concentration distribution curve.The results showed that the MQWs consisted of five InGaN/GaN multiple quantum wells.At room temperature,the average well width and impurity concentration of InGaN layer were 2.00 nm and 7.12×1018 cm^-3 respectively.By contrast,the average barrier width of GaN layer was 12.32 nm,and its average impurity concentration was 0.82×1018 cm^-3.As the temperature decreased,the InGaN well width became narrower and the impurity concentration increased,while the GaN barrier width became wider and the impurity concentration decreased.

关 键 词：C-V测量法 GAN基蓝光LED 多量子阱 

分 类 号：O472.3[理学—半导体物理]