低温CVD法制备石墨烯的研究进展  

A review of graphene synthesis at low temperatures by CVD methods

作　　者：王佳斌 任壮 侯莹[1] 闫晓丽[1] 刘培植[1] 张华[1] 章海霞[1] 郭俊杰[1] WANG Jia-bin;REN Zhuang;HOU Ying;YAN Xiao-li;LIU Pei-zhi;ZHANG Hua;ZHANG Hai-xia;GUO Jun-jie(Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原理工大学,新材料界面科学与工程教育部重点实验室,山西太原030024

出　　处：《新型炭材料》2020年第3期193-208,共16页New Carbon Materials

基　　金：国家自然科学基金(51701137,51703150);山西省自然科学基金(201701D121043);山西省高等学校科技创新项目(2019L0253).

摘　　要：石墨烯是一种由sp^2杂化碳原子组成的二维碳纳米材料。由于其特殊的性质,在世界范围内引起了广泛的关注和研究。化学气相沉积法(CVD)是制备石墨烯最有效、最常用的方法。然而,传统的CVD石墨烯生长温度非常高(1 000℃),这不仅使得石墨烯制备成本高,而且限制了其在某些领域的应用。因此,低温下石墨烯的合成是目前研究者关注的焦点。前驱体类型(气态、液态、固态)和衬底类型(过渡金属、合金、介质衬底)是影响石墨烯合成温度的重要因素。本文将从以上几个方面对低温条件下CVD合成石墨烯的研究结果进行综述。Chemical vapor deposition(CVD)is the most effective method for the synthesis of large-scale and high-quality graphene.How ever,the grow th temperature of graphene is high,about 1000℃,using conventional CVD,meaning that it is expensive and thus limits the use of the material.The synthesis of CVD graphene at low temperatures(<600℃)is therefore the focus of many researchers.Recent research on the production of CVD graphene at low temperatures is review ed.Comprehensive comparison,analysis and discussion of quality,number of layers,domain size and the uses of graphene synthesized at low temperatures using different precursors(gas,liquid and solids)and substrates(metals,metal alloys and dielectric materials)are given for different CVD methods(atmospheric pressure CVD,plasma enhanced CVD,catalyst-enhanced CVD,surface wave plasma CVD,microw ave plasma CVD,radio frequency plasma enhanced CVD and electron cyclotron resonance CVD).The future prospects and challenges of preparing graphene at low temperatures are discussed.

关 键 词：石墨烯 低温 化学气相沉积 

分 类 号：TQ127.11[化学工程—无机化工]