具有三明治集电极结构的新型无电压回跳半超结RC-IGBT  

A Novel Snapback-free Semi-Superjunction RC-IGBT with Sandwich Collector

作　　者：肖紫嫣 刘超[1] 夏云 陈万军[1] XIAO Ziyan;LIU Chao;XIA Yun;CHEN Wanjun(State Key Laboratory of Electronic Thin Film and Integrated Device,UESTC,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2020年第6期63-68,共6页Electronics & Packaging

摘　　要：提出了一种具有三明治集电极结构的半超结RC-IGBT(SSS-RC-IGBT),该结构通过在N+buffer层和P+/N+集电区之间引入高阻N-layer,增大了集电极短路电阻。通过引入集电极侧的半超结,减小了漂移区的电阻,从而消除了器件的电压回跳现象。Sentaurus仿真结果表明,本结构中N/P柱的柱深为70μm,N/P柱的掺杂浓度为3×10^15 cm^-3。高阻N-layer的厚度为5μm,掺杂浓度为5×10^13cm^-3时,器件不会发生电压回跳现象。由于所提出的器件能够完全开启且具有更高的注入效率,器件正向导通压降降低了9.7%。在正向导通电流密度为100 A/cm^2的条件下进行关断时,器件的关断损耗降低了30.6%。同时,器件具有更优的Vce-Eoff折中特性和反向恢复特性。This paper proposes a Semi-Superjunction RC-IGBT with a sandwich collector structure(SSS-RC-IGBT).The introduction of a high-resistance N-layer between the N+buffer and the P+/N+collector increases the short-circuit resistance of the collector.By introducing a semi-Superjunction on the collector side,the resistance of the drift region is reduced,thereby eliminating the snapback of the device.Sentaurus simulation results show that when the depth of the N/P pillar is 70μm,and the doping concentration of the N/P pillar is 3×10^15 cm^-3,and the thickness of the high-resistance N-layer is 5μm,and the doping concentration of N-layer is 5×10^13 cm^-3,the device completely eliminate snapback phenomenon.Since the proposed device can be fully turned on and has a higher injection efficiency,the forward voltage drop of the device is reduced by 9.7%.When the device is turned off at a current density of 100 A/cm^2,the turn-off loss of the device will be reduced by 30.6%.At the same time,the device has better Vce-Eoff tradeoff characteristic and reverse recovery characteristic.

关 键 词：逆导型IGBT 电压回跳 半超结 折中特性 反向恢复 

分 类 号：TN304[电子电信—物理电子学]