Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys  

作　　者：Qing-Jun Xu Shi-Ying Zhang Bin Liu Zhen-Hua Li Tao Tao Zi-Li Xie Xiang-Qian Xiu Dun-Jun Chen Peng Chen Ping Han Ke Wang Rong Zhang You-Liao Zheng 徐庆君;张士英;刘斌;李振华;陶涛;谢自力;修向前;陈敦军;陈鹏;韩平;王科;张荣;郑有炓(Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;College of Optoelectronics Engineering,Zaozhuang University,Zaozhuang 277160,China)

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China [2]College of Optoelectronics Engineering,Zaozhuang University,Zaozhuang 277160,China

出　　处：《Chinese Physics B》2020年第5期525-529,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0403100 and 2017YFB0403101);the National Natural Science Foundation of China(Grant Nos.61704149,61674076,and 61605071);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BY2013077,BK20141320,and BE2015111);the Project of Science and Technology Development Program in Shandong Province,China(Grant Nos.2013YD02054 and 2013YD02008);the Project of Shandong Provincial Higher Educational Science and Technology Program,China(Grant No.J13LN08);the Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics,Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD);the Six-Talent Peaks Project of Jiangsu Province,China(Grant No.XYDXX-081);the Open Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2017KF03);the Project of Autonomous Innovation and Achievement Transformation Program in Zaozhuang City,China(Grant No.2017GH3);the Overseas Study Program Funded by Shandong Provincial Government,China,the Laboratory Open Fund from Jiangsu Key Laboratory of Photoelectric Information Functional Materials,China,and the Doctoral Foundation Project of Zaozhuang University,China.

摘　　要：The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration(~ 1020 cm-3) grown by metal–organic chemical vapor deposition(MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and(VⅢ complex)1- as well as VN3+ and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mgdoped AlxGa1-xN(x = 0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2×1018 cm-3 and 3.3× 1017 cm-3, respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors’ concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.

关 键 词：ALGAN Mg doping MOCVD cathodo-luminescence Hall measurement 

分 类 号：TG146.21[一般工业技术—材料科学与工程]