碲镉汞薄膜分步化学抛光技术研究  

Research of HgCdTe film step-by-step chemical polish technology

作　　者：肖钰[1] 张国旗 徐长彬[1] 李春领[1] XIAO Yu;ZHANG Guo-qi;XU Chang-bin;LI Chun-ling(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2020年第6期703-706,共4页Laser & Infrared

摘　　要：针对碲镉汞薄膜化学抛光过程中容易产生材料组分均匀性变差、影响芯片性能的现象,提出了一种分步化学抛光技术。材料表面分析和组分分析结果表明,分步化学抛光可以降低材料表面的粗糙度,改善化学抛光材料组分的均匀性,有效地去除材料表面氧化,同时对探测器芯片性能的均匀性提升也做出了一定的贡献。Chemical polishing technology can influence HgCdTe films material composition uniformity,and the performance of chip become worse.In order to resolve this problem,a step-by-step chemical polish technology is processed.The results of material surface analysis and component analysis show that the step-by-step chemical polishing can reduce the roughness of material surface,improve the uniformity of chemical polishing material components,effectively remove the oxidation of material surface,and contribute to the improvement of the uniformity of detector chip performance.

关 键 词：碲镉汞薄膜 化学抛光 分步 均匀性 

分 类 号：TN213[电子电信—物理电子学]