用于铜互连CMP工艺的络合剂研究进展  

Research Progress on Complexing Agent for Copper Interconnect CMP Process

作　　者：孙晓琴 檀柏梅 高宝红 牛新环 刘孟瑞 高鹏程 刘玉岭 SUN Xiaoqin;TAN Baimei;GAO Baohong;NIU Xinhuan;LIU Mengrui;GAO Pengcheng;LIU Yuling(School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300130,P.R.China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,P.R.China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微电子学》2020年第3期403-409,共7页Microelectronics

基　　金：国家中长期科技发展规划-科技重大专项项目(2016ZX02301003-004-007);国家青年自然科学基金资助项目(61704046);河北省自然科学基金资助项目(F2018202174)。

摘　　要：化学机械平坦化(CMP)是实现65 nm及以下技术节点多层铜互连表面全局平坦化的唯一可靠工艺。络合剂为抛光液的主要组分,对材料去除速率、表面完整性起着至关重要的作用。综合分析了不同官能团的络合剂在铜互连CMP工艺中的应用研究现状,探究了不同官能团络合剂的作用机理,分析了络合剂与其他试剂的兼容性,总结了络合剂的发展趋势。Chemical mechanical planarization(CMP)is the uniquely reliable technique to achieve global planarization of multilayer copper interconnection surfaces in IC manufacturing below 65 nm technology node.As the main component of CMP slurry,complexing agent plays an important role in improving the removal rate of materials and surface performance.Based on the characteristics of copper removal rate,the surface morphology and selectivity of different layers of CMP,the application and research status of complexing agents of different functional groups in CMP of copper interconnection were comprehensively analyzed.The mechanism of complexing agents was investigated,and the compatibility and development trend of complexing agents and other reagents were analyzed.

关 键 词：铜互连 化学机械平坦化 络合剂 官能团 材料去除速率 

分 类 号：TN4O5.97[电子电信—微电子学与固体电子学]