一种基于肖特基二极管的逆导型SOI-LIGBT  

A Reverse Conducting SOI-LIGBT Based on Schottky Diode

作　　者：武嘉瑜 易波 陈星弼[1] WU Jiayu;YI Bo;CHEN Xingbi(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ,of Elec.Sci.and lechnol.of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2020年第3期428-432,共5页Microelectronics

基　　金：国家自然科学科学基金青年基金资助项目(61804021);电子薄膜与集成器件国家重点实验室开放基金资助项目(KFJJ201708)。

摘　　要：提出了一种逆导型(RC)SOI-LIGBT。通过在LIGBT阳极发射结反向并联一个肖特基二极管,在没有增大LIGBT正向导通压降的情况下,消除了传统阳极短路RC-LIGBT在正向导通时的电压折回效应。通过二维仿真软件对器件稳态、瞬态的电学特性进行了分析。仿真结果表明,与传统的SOI-LIGBT、续流二极管相比,该RC-LIGBT具有更高的击穿电压,且击穿电压不受阳极掺杂浓度的影响。该器件的反向恢复电荷减小了15.2%,软度因子提高一倍以上。A reverse conducting(RC)lateral insulated gate bipolar transistor(LIGBT)on silicon-on-insulator(SOI)was proposed.By connecting an anti-parallel Schottky diode with the emitter junction(P-anode/N-buffer)of the LIGBT,the snapback effect of the conventional anode-short RC-LIGBT during the forward conduction was eliminated without increasing the on-state voltage drop of the LIGBT.The steady-state and transient electrical characteristics of the device were analyzed by two-dimensional TCAD simulator,and compared with the conventional SOI-LIGBT combining with freewheeling diode.Simulation results showed that the breakdown voltage(BV)of the proposed RC-LIGBT was not only improved but also unaffected by the P-anode doping concentration.In addition,the reverse recovery charge of the proposed device was reduced by 15.2%,and the soft factor was increased by more than one time.

关 键 词：SOI-LIGBT 肖特基二极管 消除电压折回 反向导通 反向恢复 

分 类 号：TN322.8[电子电信—物理电子学]