基于GaN HEMT宽带低噪声放大器设计  

Design of broadband low noise amplifier based on GaN HEMT

作　　者：王华树 肖知明 马伟 胡伟波 Wang Huashu;Xiao Zhiming;Ma Wei;Hu Weibo(College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China)

机构地区：[1]南开大学电子信息与光学工程学院,天津300350

出　　处：《电子技术应用》2020年第7期60-64,共5页Application of Electronic Technique

基　　金：广东省重点领域研发计划(2019B010128001)。

摘　　要：为了满足不同通信标准的要求,利用氮化镓高电子迁移率晶体管器件设计了一个高线性度宽频带低噪声放大器。低噪声放大器采用两级电阻负反馈结构,利用集总参数元件和微带线对低噪声放大器的输入和输出匹配网络进行优化,实现低噪声、高线性度、宽频带和小回波损耗。在1~3 GHz频率范围内,仿真结果表明,低噪声放大器的噪声噪声系数为2.39~3.21 dB,输入端反射系数小于-10.6 d B,输出端反射系数小于-17.9 dB,增益为23.74~25.68 dB,增益平坦度小于±0.97 dB,1 dB压缩点输出功率大于24.12 dBm,三阶交调截取点输出功率大于36.55 dBm。实际测试增益为22.08~26.12 dB,基本符合仿真结果。A high linearity wideband low noise amplifier(LNA)was designed using a gallium nitride(GaN)high electron mobility transistor(HEMT)devices to meet the requirements of different communication standards.The LNA uses a two-stage resistor negative feedback structure.In order to achieve low noise,high linearity,wideband and small return loss,the lumped parameter components and microstrip line are used to optimize the input and output matching network of LNA.In the frequency range of 1 to 3 GHz,the simulation results show that the noise figure of the LNA is 2.39~3.21 dB,the input reflection coefficient is less than-10.6 dB,the output reflection coefficient is less than-17.9 dB,the gain is 23.74~25.68 dB,the gain flatness is less than±0.97 dB,the output 1 dB compression point(OP1dB)is greater than 24.12 dBm,and the output third-order intercept point(OIP3)is greater than 36.55 dBm.The actual test gain is 22.08~26.12 dB,which is basically in accordance with the simulation results.

关 键 词：低噪声放大器 氮化镓 高电子迁移率晶体管 负反馈 

分 类 号：TN722.3[电子电信—电路与系统]