基于SiGe工艺的X波段多功能芯片设计  

A Design of X Band Multi-function Chip Based on SiGe Technology

作　　者：张浩[1] 万川川[1] ZHANG Hao;WAN Chuanchuan(Nanjing Research Institute of Electronics Pechonology,Nanjing 210039,China)

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《现代雷达》2020年第6期80-84,共5页Modern Radar

摘　　要：采用锗硅工艺设计了一款X波段多功能芯片,该芯片包括开关、低噪声放大器、驱动放大器、移相器和衰减器等功能电路。传统的微波多功能芯片通常采用砷化镓(GaAs)工艺实现,具有成本高、集成度低等缺点,该设计采用Si基工艺来实现,大大降低了芯片成本,同时提高了集成度。通过采用片内温度补偿、相位补偿和并联峰化等一系列技术,使其达到较好的温度特性、较小的衰减附加相移和宽带特性。测试结果表明:该多功能芯片工作频率8 GHz^12 GHz,均方根相位误差3°,衰减附加相移小于2.5°,接收增益10 dB,发射增益3 dB。芯片包含焊盘的尺寸约为12.6 mm^2。在性能和GaAs工艺多功能芯片相当的前提下,面积减小30%以上,成本可以大幅降低。An X band multi-function chip based on SiGe technology, including RF switches, low noise amplifier, power amplifier driver, attenuator and phase shifter is presented in this paper. The traditional multi-functional chip is realized by GaAs process, which has the disadvantages of high cost and low integration. This design is based on SiGe process, which greatly reduces the cost of the chip and improves the integration. A series of techniques, such as on-chip temperature compensation, phase compensation and parallel peaking, are adopted to achieve better temperature characteristics, smaller attenuation additional phase shift and broadband characteristics. The test results show that the multi-functional chip works at 8 GHz^12 GHz, RMS phase error is less than 3°, attenuation additional phase shift is less than 2.5°, the RX gain and TX gain is 10 dB and 3 dB, respectively. The size of the chip contains pad is about 12.6 mm^2. With the same performance as GaAs process, the chip area is reduced by more than 30%, and the cost can be greatly reduced.

关 键 词：多功能芯片 移相器 衰减器 双极互补金属氧化物半导体 相控阵 收发组件 

分 类 号：TN97[电子电信—信号与信息处理]