基于堆叠式结构的高压功率器件开发  

Development of High Voltage Power Devices Based on Stack Structure

作　　者：姚剑锋 YAO Jianfeng(Foshan Blue Rocket Electronics Co.,Ltd.,Foshan 528051,China)

机构地区：[1]佛山市蓝箭电子股份有限公司,广东佛山528051

出　　处：《现代信息科技》2020年第10期38-40,共3页Modern Information Technology

摘　　要：VDMOS兼有双极晶体管和普通MOS器件的优点并广泛应用于电源电路中,针对目前在国内VDMOS器件生产中封装技术不能满足绝缘要求的问题进行了研究,提出了一种VDMOS器件堆叠式内绝缘封装技术,使用这种封装方法,能够很好地提升期间的散热性能与绝缘强度。并对功率器件芯片进行了优化设计,提高了产品的综合性能,设计生产了具备自有绝缘功能、良好散热性能、并可以承载更大的功率损耗的BRCS740R和BRCS840D系列产品,填补了国内行业的生产空白。VDMOS has the advantages of bipolar transistors and common MOS devices,and is widely used in power supply circuits.Aiming at the problem that the packaging technology in domestic VDMOS device production can not meet the insulation requirements,a stacked internal insulation packaging technology for VDMOS devices is proposed,which can improve the heat dissipation performance and insulation strength during the period.The power device chip was optimized and the comprehensive performance of the products was improved.The BRCS740R and BRCS840D series products with self insulation function,good heat dissipation performance and bearing greater power loss were designed and produced,which filled the production gap of domestic industry.

关 键 词：VDMOS 堆叠式 封装 工艺设计 

分 类 号：TN305[电子电信—物理电子学]