基于多级钳位与门信号调节相结合的IGBT串联均压电路研究  

Voltage Balancing Circuit for Series-connected IGBTs Based on Multi-level Clamp Topology and Gate Drive Signal Adjustment

作　　者：周野 王旭[1] 鲜亮 杨丹[1] 师小燕 ZHOU Ye;WANG Xu;XIAN Liang;YANG Dan;SHI Xiaoyan(School of Information Science&Engineering,Northeastern University,Shenyang 110819,Liaoning Province,China;Experimental Power Grid Centre,A*STAR Research Entities,627590,Singapore)

机构地区：[1]东北大学信息科学与工程学院,辽宁省沈阳市110819 [2]新加坡科学技术研究局智能电网实验中心,新加坡627590

出　　处：《中国电机工程学报》2020年第13期4277-4289,共13页Proceedings of the CSEE

基　　金：国家自然科学基金项目(51607029)。

摘　　要：串联绝缘栅双极型晶体管(insulate gate bipolar transistor,IGBT)关断期间的电压均衡是保证其安全稳定工作的关键。该文在多级钳位均压方式的基础上,提出一种同时作用于负载侧与门极侧的IGBT串联均压电路,该均压电路通过对先关断的IGBT电压上升斜率的抑制来实现保护与均压的功能。同时,利用静态均压电路与状态反馈电路相结合的方式,依据关断瞬态各IGBT承压实时调整驱动信号发出时刻,从控制级削弱不均压因素的影响。该文在给出均压电路拓扑的同时,分析其工作原理及设计方法,实验结果证明,依据该方法设计的均压电路能在不影响关断速度的前提下有效提高串联IGBT间电压的一致性。The top priority in guaranteeing the operation safety and reliability of a series-connected IGBTs-based system is to balance the collector-to-emitter voltage of individual IGBT when turned-off.Based on the multi-level voltage clamp topology,this paper proposed a novel voltage balancing circuit which takes effect on both load and gate sides simultaneously.It is achieved by phase-by-phase suppressing the collector-to-emitter voltage build-up rate of the firstly-turned-off IGBT.Furthermore,the dynamic and static voltage discrepancy was minimized by employing the static voltage balancing and voltage state feedback sub-circuit.The microcontroller is able to adjust the turn-off time of the IGBTs in real-time according to the feedback signals of the IGBTs’collector-to-emitter voltage states captured and sent by this sub-circuit.The circuit’s topology,operating principle,and design procedure were given.Experimental results validate the proposed circuit and its control strategy exhibit an effective enhancement to the voltage consistency among series-connected IGBTs without decelerating the turned-off speed.

关 键 词：IGBT串联 均压 多级钳位 电压反馈 门信号调节 

分 类 号：TM46[电气工程—电器]