PMOSFET耗散功率的估算和验证  

Estimation and Verification of Power Dissipation for PMOSFET

作　　者：钱晓东 张翠云 QIAN Xiaodong;ZHANG Cuiyun

机构地区：[1]安徽职业技术学院机电工程学院,安徽合肥230011

出　　处：《科技创新与应用》2020年第24期23-24,28,共3页Technology Innovation and Application

基　　金：精品在线开放课程(编号:azy2019mooc27)。

摘　　要：介绍了一种PMOSFET耗散功率的理论估算方法,采用前级推挽式逆变器为实验平台,完成热阻实验验证。结果表明,该估算方法与实际测试结果接近,为设计散热片提供了理论依据,加快了产品开发进度,具有较好的实际应用价值。A theoretical evaluation method of power dissipation for PMOSFET is introduced, and an experimental verification of thermal resistance is completed by using the front-stage push-pull inverter as the experimental platform. The end results show that the theoretical evaluation method is approximate to result of the experimental verification. This method provides a theoretical basis for designing heat sinks and can also speed up product development which has a better application value.

关 键 词：PMOSFET 耗散功率 推挽 热阻 散热片 

分 类 号：TM46[电气工程—电器]