基于高压SOI的功率因数校正LED驱动设计  

Implement of UHV SOI Process LED Driver with Power Factor Correction

作　　者：罗丙寅 LUO Bingyin(CR Powteh(Shanghai)Co.,Ltd,Shanghai 200436,China)

机构地区：[1]华润矽威科技(上海)有限公司,上海200436

出　　处：《集成电路应用》2020年第7期1-3,共3页Application of IC

基　　金：上海市科技企业技术创新课题项目。

摘　　要：外延技术的日趋成熟,使SOI工艺得到更广泛的应用,其介质隔离特性为UHV设计提供新的设计方法,各国对LED灯具功率因数、效率要求趋严,LED驱动设计带来新挑战。因此SOI工艺与LED驱动设计结合为解决问题提供思路。基于SOI工艺设计自带高压启动的LED驱动芯片,通过在环路中引入乘法器实现了系统高功率因数。测试结果显示,在85~265VAC输入范围内,系统实现83%效率及0.9以上PF值。SOI technology has been widely implemented with rapid development of epitaxy technology.SOI’s dielectric isolation characteristics provides novel design methodology for UHV design.Meanwhile more stringent requirement on the efficiency and power factor of LED lamp brings new challenges for LED driver design.Therefore the combination of SOI technology and LED drive design provides possibility to solve the problem.The LED driver with multiplier in control loop and HV start up circuit based on SOI LDMOS is achieved in this paper.Test results show that 83%system efficiency and PF 0.9 is achieved in 85~265VAC input range.

关 键 词：模拟乘法器 LED恒流驱动 绝缘体上的硅 LDMOS 高压启动 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN304