Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment  

作　　者：Hao Liu Wen-Jun Liu Yi-Fan Xiao Chao-Chao Liu Xiao-Han Wu and Shi-Jin Ding 刘浩;刘文军;肖懿凡;刘超超;吴小晗;丁士进(State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China)

机构地区：[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China

出　　处：《Chinese Physics Letters》2020年第7期92-95,共4页中国物理快报（英文版）

基　　金：Supported by the Guangdong Province Key Technologies Research and Development Program(Grant No.2019B010128001);the National Natural Science Foundation of China(Grant No.61774041);the Shanghai Science and Technology Innovation Program(Grant No.19520711500)。

摘　　要：The energy band alignment at the atomic layer deposited Al2O3/β-Ga2O3 interface with CHF3 treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry(SIMS).With additional CHF3 plasma treatment,the conduction band offset increases from 1.95±0.1 eV to 2.32±0.1 eV;and the valence band offset decreases from 0.21±0.1 eV to-0.16±0.1 eV.As a result,the energy band alignment changes from type I to type II.This energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d,resulting from the Ga–F bond formation in the F-rich interfacial layer,which is confirmed by the SIMS results.

关 键 词：CHF3 SIMS TREATMENT 

分 类 号：TN305[电子电信—物理电子学]