InP基HBT小信号模型参数直接提取方法  

Direct Parameter Extraction Method for InP-Based HBT Small Signal Model

作　　者：徐坤 张金灿 王金婵 刘敏 刘博 Xu Kun;Zhang Jincan;Wang Jinchan;Liu Min;Liu Bo(Electrical Engineering College,Henan University of Science and Technology,Luoyang 471023,China)

机构地区：[1]河南科技大学电气工程学院,河南洛阳471023

出　　处：《半导体技术》2020年第8期602-608,644,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61804046,61704049);河南省科技攻关项目(202102210322)。

摘　　要：为了精确地表征器件特性,提出了一种直接提取T型异质结双极型晶体管(HBT)小信号模型参数的方法。该方法仅依赖于S参数测试数据,采用精确的闭式方程式直接提取电路元件参数。该方法简单、易于实施。首先使用开路短路测试结构提取焊盘寄生电容和电感的值,然后用截止状态和Z参数的方法提取外部电阻,再去掉这些参数以简化电路模型,本征部分的电路元件采用剥离算法来确定参数值。采用1μm×15μm的InP HBT对该算法的有效性进行验证,结果表明,在0.1~40 GHz频率范围内,模型仿真结果准确地拟合了器件测试结果。In order to accurately characterize device characteristics, a method for direct extraction of small-signal model parameters of T-type heterojunction bipolar transistors(HBTs) was proposed. This method only relies on S-parameter test data, and the precise closed-form equation is used to directly extract circuit component parameters. The method is simple and easy to implement. First, the open-short test structure was used to extract the values of the parasitic capacitance and inductance of the pad, and then the external resistance was extracted by the off-state method and the Z-parameter method. Then, these parameters were removed to simplify the circuit model, and the intrinsic parameters values of the circuit were determined by the peeling algorithm. The effectiveness of the algorithm was verified by a 1 μm×15 μm InP HBT. The results show that the simulation results of the model accurately fit the test results of the device in the frequency range of 0.1-40 GHz.

关 键 词：异质结双极型晶体管(HBT) 小信号等效电路 直接提取 剥离算法 INP 

分 类 号：TN322.8[电子电信—物理电子学] TN304.23