锑化铟焦平面器件背面减薄后的表面处理方法研究  

Study on Surface Treatment Method of InSb Focal Plane Device After Backside Thinning

作　　者：肖钰[1] 李家发 王淑艳[1] 曹凌霞[1] 李海燕[1] XIAO Yu;LI Jia-fa;WANG Shu-yan;CAO Ling-xia;LI Hai-yan(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2020年第6期7-11,共5页Infrared

基　　金：陕西省教育厅重点实验室科研计划项目(17JS105);西安石油大学研究生创新与实践能力培养计划项目(YCS19212066)。

摘　　要：经传统的背面减薄工艺处理后,锑化铟焦平面器件的表面上经常会有细微划道;采用传统的表面清洗方式时也容易对器件表面造成划道,导致工艺重复性差。因此,当器件经过背面减薄后,利用腐蚀液去除划道,并采用基于石油醚和无水乙醇的非接触式清洗方法,有效降低了器件表面产生划道的几率,同时避免了由于表面腐蚀速率不均匀导致测试时部分区域电平较高、在测试图像上出现亮斑等情况;另外还提高了工艺的重复性,使锑化铟器件的红外成像均匀且没有划道,从而提高了该器件的成品率。The surface of the indium antimonide focal plane device is often marked with fine lines after the traditional backside thinning process;when the traditional surface cleaning method is used,it is also easy to cause scratches on the surface of the device,resulting in poor process repeatability.Therefore,when the device is thinned on the back surface,the corrosion liquid is used to remove the scratches,and the non-contact cleaning method based on petroleum ether and absolute ethanol is adopted,which effectively reduces the probability of scratches on the surface of the device and avoids the higher level of some areas during the test due to the uneven surface corrosion rate,bright spots on the test image,etc.In addition,the process repeatability is improved,and the infrared imaging of the indium antimonide device is uniform and there is no scratch,thereby improving the yield of the device.

关 键 词：锑化铟 非接触式清洗 表面处理 划道 

分 类 号：TN215[电子电信—物理电子学]