1.3μm半导体量子点激光器的研究进展  

Research Progress on 1.3μm Semiconductor Quantum-Dot Lasers

作　　者：吕尊仁[1,2] 张中恺 王虹 丁芸芸 杨晓光 孟磊[1,2] 柴宏宇 杨涛 LüZunren;Zhang Zhongkai;Wang Hong;Ding Yunyun;Yang Xiaoguang;Meng Lei;Chai Hongyu;Yang Tao(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]中国科学院大学材料与光电研究中心,北京100049

出　　处：《中国激光》2020年第7期214-229,共16页Chinese Journal of Lasers

基　　金：国家重点研发计划(2016YFB0402302)。

摘　　要：由于半导体量子点具有很强的三维量子限制效应,量子点(QD)激光器展现出低阈值电流、高调制速率、高温度稳定、低线宽增强因子和高抗反射等优异性能,有望在未来高速光通信及高速光互连等领域有重要的应用。同时,量子点结构具有对位错不敏感的特性,使得量子点激光器成为实现硅光集成所迫切需求的高效光源强有力候选者。先简要综述1.3μm半导体量子点激光器的研究进展,再着重介绍GaAs基量子点激光器在阈值电流密度、温度稳定性、调制速率和抗反射特性等方面展示出的优异特性,最后对在切斜Si衬底和Si(001)衬底上直接外延生长的量子点激光器进行介绍。Owing to the strong three-dimensional quantum-confinement effect of semiconductor quantum dots(QDs),QD lasers exhibit superior performances with low threshold current,high modulation rate,high temperature stability,low linewidth enhancement factor,and high antireflection.They are expected to have important applications in high-speed optical communication,high-speed optical interconnection,and other fields.At the same time,a QD structure is insensitive to dislocations,making QD lasers powerful candidates for the efficient light sources that are urgently needed for silicon optical integration.First,we briefly review the research progress on 1.3-μm semiconductor QD lasers,and then focus on the excellent characteristics exhibited by GaAs-based QD lasers,including their threshold current density,temperature stability,modulation rate,and antireflection characteristics.We also introduce QD lasers grown directly on GaAs and Si(001)substrates.

关 键 词：激光器 半导体激光器 量子点 硅基 阈值电流 

分 类 号：O475[理学—半导体物理]