光场分布对GaN基绿光激光器的影响  

Influence of Optical Field Distribution on GaN-Based Green Laser Diodes

作　　者：梁锋[1] 赵德刚[1,2] 江德生 刘宗顺[1] 朱建军[1] 陈平[1] 杨静[1] Liang Feng;Zhao Degang;Jiang Desheng;Liu Zongshun;Zhu Jianjun;Chen Ping;Yang Jing(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《中国激光》2020年第7期237-242,共6页Chinese Journal of Lasers

基　　金：国家重点研发计划(2018YFB0406903,2016YFB0401801,2016YFB0401803);国家自然科学基金(61674138,61674139,61604145,61574135,61574134,61904172);科学挑战计划(TZ2016003)。

摘　　要：详细研究了n型AlGaN限制层与InGaN上波导对GaN基绿光激光器光场分布与电学特性的影响,结果表明:增加n型AlGaN限制层厚度或提高InGaN上波导中的铟组分可以明显抑制GaN基绿光激光器的光场泄漏,改善光场分布;相比In0.02Ga0.98N上波导,采用更高铟组分的In0.05Ga0.95N上波导可增加光场限制因子,改善绿光激光器的性能。综合调控n型限制层和上波导才能有效改善GaN基绿光激光器的光场分布,提高激光器的性能。This study thoroughly investigates the influences of n-type AlGaN cladding layers and upper waveguide layers(UWG)on the optical field distribution and electrical characteristics of GaN-based green laser diodes(LDs).It is found that the optical field leakage can be evidently suppressed by increasing the thickness of the AlGaN cladding layer or the indium content of the InGaN upper waveguide layer.Moreover,compared with LDs with In0.02Ga0.98N UWG,the LDs with a higher indium content of In0.05Ga0.95N UWG perform better because of the larger optical confinement factor.Therefore,coregulation of the n-type cladding layer and the UWG can improve the optical field distribution,enhancing the performance of GaN-based green LDs.

关 键 词：激光光学 氮化镓 绿光激光器 光场分布 

分 类 号：TN248.4[电子电信—物理电子学]