检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:袁野 柴小力 杨成奥 张一 尚金铭 谢圣文 李森森[5] 张宇[1,2] 徐应强 宿星亮[4] 牛智川 Yuan Ye;Chai Xiaoli;Yang Chengao;Zhang Yi;Shang Jinming;Xie Shengwen;Li Sensen;Zhang Yu;Xu Yingqiang;Su Xingliang;Niu Zhichuan(The State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronics Technology,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China;Laboratory of Solid Quantum Material Center,College of Physics and Electronic Engineering,Shanxi University,Taiyuan,Shanxi 030006,China;Science and Technology on Electro-Optical Information Security Control Laboratory,Tianjin 300308,China)
机构地区:[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]北京量子信息科学研究院,北京100193 [4]山西大学物理与电子工程学院固体量子材料中心实验室,山西太原030006 [5]光电信息控制和安全技术重点实验室,天津300308
出 处:《中国激光》2020年第7期295-299,共5页Chinese Journal of Lasers
基 金:国家自然科学基金(61790582);广东省科技计划项目(2018B030329001)。
摘 要:设计制备了GaSb基I型InGaAsSb量子阱激光器,其激射波长为2。75μm。五元势垒材料AlGaInAsSb有效降低了势垒的价带能级并提高了价带带阶,使量子阱发光波长红移至2。75μm波段。通过优化分子束外延生长参数,得到了高发光效率的量子阱激光器外延材料,在此基础上设计并制备了腔长为1。5 mm、脊宽为50μm、中心波长为2。75μm的法布里-珀罗腔结构的激光器;所设计激光器可以实现室温连续激射,其最大输出功率为60 mW,阈值电流密度为533 A·cm^-2。Based on the I-type quantum well of the GaSb system,lasers with a lasing wavelength of 2.75μm was fabricated.The valence band level of the barrier was effectively reduced,and the valence band order was increased using the quinary barrier material AlGaInAsSb.Additionally,the luminescence wavelength of the quantum well red shifted to 2.75-μm band.The optimal epitaxial parameters of the quantum well were obtained by optimizing the growth parameters of molecular beam epitaxy,and a Fabry-Perot laser device with a cavity length of 1.5 mm,ridge width of 50μm,and central wavelength of 2.75μm was fabricated.The laser realizes continuous lasing at room temperature,and its maximum output power and threshold current are 60 mW and 533 A·cm^-2,respectively.
分 类 号:TN248.4[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:18.118.193.52