纳米pMOSFET上考虑涨落的NBTI测试方法新进展  

Progress of NBTI Measurement Methods Considering Variability on Nano-scale pMOSFET

作　　者：高汭 张小龙[3] 雷胡敏 林晓玲[1,2] 章晓文 陈义强[1,2] 黄云 恩云飞[1,2] GAO Rui;ZHANG Xiaolong;LEI Humin;LIN Xiaoling;ZHANG Xiaowen;CHEN Yiqiang;HUANG Yun;EN Yunfei(CEPREI,Guangzhou 510610,China;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou 510610,China;The 43th Research Institute of China Electronics Technology Group,Hefei 230088,China)

机构地区：[1]工业和信息化部电子第五研究所,广东广州510610 [2]电子元器件可靠性物理及其应用技术重点实验室,广东广州510610 [3]中国电子科技集团公司第四十三研究所,安徽合肥230088

出　　处：《电子产品可靠性与环境试验》2020年第4期118-125,共8页Electronic Product Reliability and Environmental Testing

基　　金：广东省重点领域研发计划项目(No.2019B010145001)资助。

摘　　要：回顾了纳米pMOSFET上考虑涨落的NBTI测试方法的新进展。首先,简单地介绍了5种传统的NBTI测试方法:准静态直流完整Id-Vg测试法、在线测试法、单点Id测试法、延伸Id测试法和超快脉冲测试法,并分别分析了他们各自的优缺点;然后,阐述了由于pMOSFET尺寸缩小到纳米尺度后带来的涨落效应对传统的NBTI测试方法的挑战;最后,详细地介绍了纳米pMOSFE上的3种考虑涨落的NBTI测试新方法,即随机电报噪声、时间相关缺陷谱和器件内部波动。The progress of NBTI measurement methods considering variability on nano-scale pMOSFET is reviewed.Firstly,the five traditional NBTI measurement methods,including quasistatic DC full I_d-V_g measurement,on-the-fly measurement,spot-I_d sense measurement,extended-I_d sense measurement and ultra-fast pulse measurement are briefly introduced,and their advantages and disadvantages are discussed respectively.Then,the challenges on traditional NBTI characterization method brought by variability as the scale of pMOSFET down to nanoscale are elucidated.Finally,three advanced NBTI measurement techniques on nanoscale pMOSFET considering variability,namely random telegraph noise,time dependent defect spectroscopy,within-device fluctuation,are elaborately in detail.

关 键 词：纳米PMOSFET 涨落 负偏压温度不稳定性 

分 类 号：TN47[电子电信—微电子学与固体电子学]