氧化铟掺铪红外透明导电薄膜  

Infrared Indium Oxide Hf-doped Transparent Conductive Films

作　　者：田丰 毕然 赵雯媛 韩锋博 李雅丹[1] 郑传涛[1] 王一丁[1] TIAN Feng;BI Ran;ZHAO Wen-yuan;HAN Feng-bo;LI Ya-dan;ZHENG Chuan-tao;WANG Yi-ding(State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)

机构地区：[1]吉林大学电子科学与工程学院,集成光电子学国家重点实验室吉林大学实验区,长春130012

出　　处：《光子学报》2020年第9期71-77,共7页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2016YFD0700101);国家自然科学基金(Nos.61960206004,61775079,61627823);吉林省科技发展计划项目(Nos.20180201046GX,20190101016JH)。

摘　　要：采用射频磁控溅射与退火工艺相结合的方法,分别在石英和硒化锌(ZnSe)衬底上制备了掺铪氧化铟(IHfO)薄膜,掺杂比例In2O3∶HfO2为98wt.%∶2wt.%.测试了薄膜的组成结构和3~5μm红外波段的光电性质,分析了退火温度、薄膜厚度和氧气流速对薄膜性能的影响.X射线衍射、扫描电子显微镜和X射线能谱表明,制备的IHfO薄膜具有氧化铟的立方体结构,掺杂铪并没有影响氧化铟的生长方向,但是减小了晶格间距,铪与铟外层电子形成新的杂化轨道.傅里叶变换红外光谱表明,随着退火温度的增加,IHfO薄膜在3~5μm波段的透过率逐渐下降,沉积在ZnSe衬底上的薄膜具有更平稳的透过率,厚度为100nm薄膜在3~5μm波段平均透过率为68%.测试霍尔效应表明,随着氧气流速的增加,IHfO薄膜电阻率逐渐增加,载流子浓度减小,霍尔迁移率变化不明显.晶界散射是影响IHfO薄膜迁移率的主要因素,当氧气流速为0.3sccm时,薄膜最佳电阻率为3.3×10-2Ω·cm.与透可见光波段的导电氧化铟锡(ITO)薄膜相比,制备的IHfO薄膜可以应用在3~5μm红外波段检测气体,红外制导等领域.High-quality indium Hf-doped oxide(IHfO)films were prepared on quartz and ZnSe substrates by RF magnetron sputtering and annealing.The doping ratio of In2 O3∶HfO2 was 98 wt.%∶2 wt.%.The composition of the film and the photoelectric properties of the 3~5μm infrared band were tested and analyzed.The effects of annealing temperature,film thickness and oxygen flow rate on the properties of the film were analyzed.The results of XRD,SEM and XPS show that the prepared IHfO film has the stereo-structure of indium oxide.The doping of germanium does not affect the growth direction of indium oxide,but it leads to the decrease of lattice spacing,and the new hybridization of germanium and indium electrons track.The FTIR test results show that the transmittance of IHfO film in the 3~5μm band decreases with the increase of annealing temperature,and the film deposited on the ZnSe substrate has a more stable transmittance.When the film thickness is 100 nm,the average transmission rate in the3~5μm is around 68%.The Hall Effect test results show that with the increase of oxygen flow rate,the resistivity of IHfO film increases gradually,the carrier concentration decreases,and the Hall mobility changes little.The analysis shows that grain boundary scattering is the main factor affecting the mobility of IHfO film.The optimal resistivity of the film is 3.3×10-2Ω·cm when the oxygen flow rate is0.3 sccm.Compared with the commercial visible-band Indium Tin Oxide(ITO)thin films,the IHfO thin films prepared in this paper can be better applied in gas detection,infrared guidance and other related fields in the 3~5μm infrared band.

关 键 词：磁控溅射 中红外 透明导电薄膜 氧化铟 掺杂 

分 类 号：TN21[电子电信—物理电子学]