AIN厚膜基板通孔金属化工艺研究  

Research on Through Hole Metallization Process of AIN Thick Film Substrate

作　　者：兰耀海 沐方清[1] LAN Yao-hai;MU Fang-qing(No.43rd Research Institute of CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,合肥230088

出　　处：《混合微电子技术》2020年第1期71-74,共4页Hybrid Microelectronics Technology

摘　　要：AIN厚膜基板已逐渐成为集成电路的一个重要组成部分,通过通孔金属化实现基板双面互连是一项可以大幅增加功率散热的关键技术。本文通过深入研究掩模填孔工艺过程中的刮板角度、浆料黏度和填孔压力等因素,最终确定了可实现通孔填充饱满的工艺参数。同时,对烧结后的基板通孔进行了电连接性测试。最终实现了孔径0.2mm的高可靠性A1N基板掩模填孔工艺开发。AIN thick film substrates have gradually become an important part of integrated circuits,and achieving double-sided interconnect through metallization of holes is a key technology that can greatly increase the power cooling.Through further research exploration of the squeegee angle,slurry viscosity,hole filling pressure and other factors in the process of hole filling,the above process parameters that can achieve hole filling sufficiently are finally determined.At the same time,the reliability of sintered substrate was verified by the electric connection test.Finally,a process of highly reliable hole filling for AIN substrate with an aperture of 0.2mm is developed.

关 键 词：AIN基板 填孔 金属化 

分 类 号：TN304.8[电子电信—物理电子学]