氧化镓生长模拟中的流场与反应参数优化研究  

Optimization of Flow Field and Reaction Parameters in the Growth Simulation of Gallium Oxide

作　　者：戴必胜 陈琳[1,2] 陶志阔[1] 修向前[2] DAI Bisheng;CHEN Lin;TAO Zhikuo;XIU Xiangqian(School of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,CHN;School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,CHN)

机构地区：[1]南京邮电大学电子与光学工程学院,南京210023 [2]南京大学电子科学与工程学院,南京210023

出　　处：《半导体光电》2020年第4期527-530,547,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61574079);南京邮电大学校级科研基金项目(NY217108)。

摘　　要：建立了用于生长直径为15.24cm(6inch)的Ga2O3材料的氢化物气相外延(HVPE)生长腔的二维几何模型,对Ga2O3材料的生长进行了数值模拟。依次优化了GaCl进气速度、O2进气速度、喷口到衬底间的距离等关键参数,在较高生长速率下使衬底上的Ga2O3膜厚相对均匀度达到7.02%。此外,对仿真中不同的反应活化能设置进行了对比实验,发现活化能参数虽然对平均生长速率有明显影响,但是对样品的生长速率分布及均匀性影响不大。A two-dimensional geometry model of hydride vapor phase epitaxy(HVPE)growth chamber with the diameter of 15.24 cm(6 inch)was established to simulate the growth of Ga2O3 material.The key parameters were optimized,such as the inlet velocity of GaCl and O2 and the distance between the nozzle and the substrate.The uniformity of the thickness of Ga2O3 film on the substrate reached 7.02% at a relatively high growth rate.In addition,simulation experiments were carried out under different reactive activation energy parameters.It is found that although the activation energy parameters affect the average growth rate significantly,they have little influence on the optimal design of growth rate distribution and uniformity of the samples.

关 键 词：GA2O3 氢化物气相外延 计算机仿真 流速 活化能 

分 类 号：TN304.054[电子电信—物理电子学] TN304.23