基于InP DHBT工艺的DC^45 GHz 1∶8低相噪静态分频器  

A DC^45 GHz 1∶8 Static Frequency Divider with Low Phase Noise in InP DHBT Technology

作　　者：张敏[1,2,3,4] 孟桥 张有涛[2,3,4] 张翼[4] 程伟 李晓鹏[2,3,4] ZHANG Min;MENG Qiao;ZHANG Youtao;ZHANG Yi;CHENG Wei;LI Xiaopeng(Institute of RF&OE ICs,Southeast University,Nanjing,210096,CHN;Nanjing GuoBo Electronics Co.,Ltd,Nanjing,211153,CHN;Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National and Local Joint Engineering Laboratory of RF Integration and Micro assembly Technology,Nanjing,211153,CHN)

机构地区：[1]东南大学射频光电集成电路研究所,南京210096 [2]南京国博电子有限公司,南京211153 [3]南京电子器件研究所,南京210016 [4]射频集成与微组装技术国家地方联合工程实验室,南京211153

出　　处：《固体电子学研究与进展》2020年第4期247-251,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61804081)。

摘　　要：采用0.7μm InP DHBT工艺设计并实现了一款超宽带1∶8静态分频器芯片,内部分频采用电流模式逻辑结构实现,针对InP DHBT器件的高频特点对内部各电路进行了合理优化,实现了整个工作带宽内的宽输入功率范围和高输出信号平坦度。测试结果显示,正弦波输入时芯片可工作在0.2~45.0 GHz超宽带范围内,输入功率覆盖-10^+7 dBm,输出功率大于3.9 dBm,38 GHz输入时相位噪声优于-140 dBc/Hz,总功耗0.29 W。An ultra wideband 1∶8 static divider chip based on 0.7 μm InP DHBT technology was designed and implemented. The internal frequency division was realized by using current mode logic structure. The internal circuits were optimized reasonably according to the high frequency characteristics of the InP DHBT devices. Thus,the wide input power range and high output power flatness in the whole working bandwidth were realized. Test results show that the operating bandwidth is from 0.2~45.0 GHz with sine-wave input. The input power range is from-10~ +7 dBm and the output power is more than 3.9 dBm. The phase noise is better than-140 dBc/Hz at 38 GHz input. The overall power consumption is 0.29 W.

关 键 词：静态分频器 磷化铟 超宽带 低相噪 

分 类 号：TN322.8[电子电信—物理电子学] TN431.2